onsemi (Ansemi)
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NCP5109BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V

NCP5109BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V
מספר חלק
NCP5109BDR2G
קטגוריה
Power Chip > Gate Driver IC
יצרן/מותג
onsemi (Ansemi)
כימוס
SOIC-8
אֲרִיזָה
taping
מספר חבילות
2500
תיאור
The NCP5109 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
בקש הצעת מחיר
אנא מלא את כל השדות הנדרשים ולחץ על שלח, אנו ניצור איתך קשר תוך 12 שעות בדוא"ל. אם יש לך בעיה כלשהי, אנא השאר הודעות או דוא"ל אל [email protected], אנו נגיב בהקדם האפשרי.
במלאי 81488 PCS
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מילות מפתח של NCP5109BDR2G
NCP5109BDR2G רכיבים אלקטרוניים
NCP5109BDR2G מכירות
ספק NCP5109BDR2G
NCP5109BDR2G מפיץ
NCP5109BDR2G טבלת נתונים
NCP5109BDR2G תמונות
מחיר NCP5109BDR2G
NCP5109BDR2G הצעה
NCP5109BDR2G המחיר הנמוך ביותר
חיפוש NCP5109BDR2G
NCP5109BDR2G רכישה
שבב NCP5109BDR2G