onsemi (Ansemi)
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NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
מספר חלק
NCP5106BDR2G
קטגוריה
Power Chip > Gate Driver IC
יצרן/מותג
onsemi (Ansemi)
כימוס
SOIC-8-150mil
אֲרִיזָה
taping
מספר חבילות
2500
תיאור
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
בקש הצעת מחיר
אנא מלא את כל השדות הנדרשים ולחץ על שלח, אנו ניצור איתך קשר תוך 12 שעות בדוא"ל. אם יש לך בעיה כלשהי, אנא השאר הודעות או דוא"ל אל [email protected], אנו נגיב בהקדם האפשרי.
במלאי 75348 PCS
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מילות מפתח של NCP5106BDR2G
NCP5106BDR2G רכיבים אלקטרוניים
NCP5106BDR2G מכירות
ספק NCP5106BDR2G
NCP5106BDR2G מפיץ
NCP5106BDR2G טבלת נתונים
NCP5106BDR2G תמונות
מחיר NCP5106BDR2G
NCP5106BDR2G הצעה
NCP5106BDR2G המחיר הנמוך ביותר
חיפוש NCP5106BDR2G
NCP5106BDR2G רכישה
שבב NCP5106BDR2G