Vishay Siliconix
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SQJ479EP-T1_GE3
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SQJ479EP-T1_GE3 Product Overview

Introduction

The SQJ479EP-T1_GE3 is a semiconductor product belonging to the category of power MOSFETs. This device is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Electronic applications requiring power switching
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: TO-252-3
  • Essence: Efficient power management
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Voltage Rating: 100V
  • Current Rating: 30A
  • On-Resistance (RDS(on)): 8mΩ
  • Gate Threshold Voltage (VGS(th)): 2.5V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SQJ479EP-T1_GE3 follows the standard pin configuration for a TO-252-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High efficiency power switching
  • Low on-resistance for reduced power losses
  • Fast switching speed for improved performance

Advantages and Disadvantages

Advantages

  • Enhanced power management capabilities
  • Reduced heat dissipation
  • Improved system reliability

Disadvantages

  • Higher cost compared to traditional MOSFETs
  • Sensitive to electrostatic discharge (ESD)

Working Principles

The SQJ479EP-T1_GE3 operates based on the principle of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a suitable voltage is applied to the gate terminal, it allows the flow of current between the source and drain terminals, enabling efficient power switching.

Detailed Application Field Plans

The SQJ479EP-T1_GE3 finds extensive application in various fields, including: - Switching power supplies - Motor control systems - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  1. SQJ480EP-T1_GE3: Similar specifications with enhanced ESD protection
  2. SQJ478EP-T1_GE3: Lower on-resistance for higher efficiency

In conclusion, the SQJ479EP-T1_GE3 power MOSFET offers high-performance power switching capabilities with a focus on efficiency and reliability, making it a preferred choice for diverse electronic applications.

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של SQJ479EP-T1_GE3 בפתרונות טכניים

Sure, here are 10 common questions and answers related to the application of SQJ479EP-T1_GE3 in technical solutions:

  1. What is the operating temperature range of SQJ479EP-T1_GE3?

    • The operating temperature range of SQJ479EP-T1_GE3 is -55°C to 150°C.

  2. What is the maximum drain-source voltage rating of SQJ479EP-T1_GE3?

    • The maximum drain-source voltage rating of SQJ479EP-T1_GE3 is 30V.

  3. What is the typical on-resistance of SQJ479EP-T1_GE3?

    • The typical on-resistance of SQJ479EP-T1_GE3 is 5.5mΩ at Vgs=10V.

  4. Can SQJ479EP-T1_GE3 be used in automotive applications?

    • Yes, SQJ479EP-T1_GE3 is suitable for automotive applications.

  5. What is the gate threshold voltage of SQJ479EP-T1_GE3?

    • The gate threshold voltage of SQJ479EP-T1_GE3 is typically 1.5V.

  6. Is SQJ479EP-T1_GE3 RoHS compliant?

    • Yes, SQJ479EP-T1_GE3 is RoHS compliant.

  7. What is the maximum continuous drain current of SQJ479EP-T1_GE3?

    • The maximum continuous drain current of SQJ479EP-T1_GE3 is 120A.

  8. Does SQJ479EP-T1_GE3 have built-in ESD protection?

    • Yes, SQJ479EP-T1_GE3 features built-in ESD protection.

  9. What is the typical input capacitance of SQJ479EP-T1_GE3?

    • The typical input capacitance of SQJ479EP-T1_GE3 is 6800pF.

  10. Can SQJ479EP-T1_GE3 be used in power management applications?

    • Yes, SQJ479EP-T1_GE3 is suitable for power management applications.

I hope these answers provide the information you were looking for! If you need further details on any specific question, feel free to ask.