SQD40030E_GE3

Product Overview

• Category: Semiconductor
• Use: Power MOSFET
• Characteristics: High voltage, high speed switching, low on-resistance
• Package: TO-252-3
• Essence: Efficient power management
• Packaging/Quantity: 2500 units per reel

Specifications

• Voltage Rating: 100V
• Current Rating: 40A
• On-Resistance: 8.5mΩ
• Gate Charge: 35nC
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

1. Source (S)
2. Gate (G)
3. Drain (D)

Functional Features

• High voltage capability
• Fast switching speed
• Low on-resistance
• Enhanced power efficiency

Advantages and Disadvantages

Advantages: - Improved power management - Reduced heat dissipation - Enhanced system reliability

Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to electrostatic discharge

Working Principles

The SQD40030E_GE3 operates based on the principle of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of a channel.

Detailed Application Field Plans

This power MOSFET is suitable for various applications including: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

1. SQD30020E_GE3
   • Voltage Rating: 60V
   • Current Rating: 30A
   • On-Resistance: 12mΩ
2. SQD50050E_GE3
   • Voltage Rating: 150V
   • Current Rating: 50A
   • On-Resistance: 6.5mΩ

Note: The alternative models listed above are for reference purposes and may not be direct replacements.

This comprehensive entry provides detailed information about the SQD40030E_GE3 power MOSFET, covering its specifications, features, application fields, and alternative models, making it a valuable resource for engineers and professionals in the semiconductor industry.