SISS02DN-T1-GE3

Product Category

SISS02DN-T1-GE3 belongs to the category of semiconductor devices, specifically a silicon carbide Schottky diode.

Basic Information Overview

• Use: The SISS02DN-T1-GE3 is used as a rectifier in power supplies and other applications where high efficiency and fast switching are required.
• Characteristics: It features low forward voltage drop, high-frequency operation, and high-temperature stability.
• Package: The SISS02DN-T1-GE3 comes in a compact, surface-mount package for easy integration into circuit designs.
• Essence: Its essence lies in providing efficient and reliable rectification in power electronics applications.
• Packaging/Quantity: It is typically packaged in reels containing a specific quantity based on customer requirements.

Specifications

• Voltage Rating: 650V
• Current Rating: 2A
• Forward Voltage Drop: 1.7V at 25°C
• Reverse Recovery Time: 15ns
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SISS02DN-T1-GE3 has a standard SMD (Surface Mount Device) pin configuration with two terminals for connection to the circuit board.

Functional Features

• Fast Switching: Enables high-frequency operation in power supply circuits.
• Low Forward Voltage Drop: Minimizes power loss and improves efficiency.
• High-Temperature Stability: Ensures reliable performance in harsh operating conditions.

Advantages and Disadvantages

• Advantages:
  • High efficiency
  • Fast switching speed
  • Reliable performance at high temperatures
• Disadvantages:
  • Higher cost compared to traditional silicon diodes
  • Sensitive to overvoltage conditions

Working Principles

The SISS02DN-T1-GE3 operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for faster switching and lower forward voltage drop compared to conventional PN-junction diodes.

Detailed Application Field Plans

The SISS02DN-T1-GE3 is well-suited for use in: - Switch-mode power supplies - Solar inverters - Motor drives - Power factor correction circuits

Detailed and Complete Alternative Models

• Alternative Model 1: SISS03DN-T1-GE3
  • Voltage Rating: 1200V
  • Current Rating: 3A
  • Forward Voltage Drop: 1.5V
• Alternative Model 2: SISS01DN-T1-GE3
  • Voltage Rating: 500V
  • Current Rating: 1A
  • Forward Voltage Drop: 1.8V

This completes the entry for SISS02DN-T1-GE3, covering its product category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.