SIHG11N80E-GE3

Product Overview

Category

The SIHG11N80E-GE3 belongs to the category of power MOSFETs.

Use

It is used for high-voltage, high-speed power switching applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The SIHG11N80E-GE3 is typically available in a TO-220AB package.

Essence

This product is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes and is available in varying quantities depending on the supplier.

Specifications

• Drain-Source Voltage (VDS): 800V
• Continuous Drain Current (ID): 11A
• On-Resistance (RDS(on)): 0.52Ω
• Gate Threshold Voltage (VGS(th)): 2.5V
• Total Gate Charge (Qg): 18nC
• Diode Forward Current: 11A

Detailed Pin Configuration

The SIHG11N80E-GE3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability allows for use in various power applications.
• Low on-resistance minimizes power loss and improves efficiency.
• Fast switching speed enables rapid power control.

Advantages

• Suitable for high-voltage applications
• Low on-resistance leads to reduced power dissipation
• Fast switching speed enhances overall system performance

Disadvantages

• May require additional circuitry for driving the gate due to high gate threshold voltage
• Higher gate charge compared to some alternative models

Working Principles

The SIHG11N80E-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans

The SIHG11N80E-GE3 is commonly used in: - Switching power supplies - Motor control systems - Inverters - Industrial equipment

Detailed and Complete Alternative Models

Some alternative models to the SIHG11N80E-GE3 include: - IRF840 - STP16NF06L - FQP27P06

In conclusion, the SIHG11N80E-GE3 power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power switching applications. While it has certain advantages, such as its suitability for high-voltage applications and low on-resistance, it also has limitations, including a higher gate charge compared to some alternative models. Understanding its specifications, pin configuration, functional features, and application field plans is crucial for effectively integrating this component into electronic systems. Additionally, being aware of alternative models can provide flexibility in design and procurement decisions.