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SIHF12N60E-GE3

SIHF12N60E-GE3

Product Overview

Category

The SIHF12N60E-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching circuits.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIHF12N60E-GE3 is typically available in a TO-220AB package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 12A
  • On-Resistance: 0.65Ω
  • Gate-Source Voltage (Max): ±20V
  • Total Gate Charge: 28nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHF12N60E-GE3 has a standard pin configuration with three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of power flow.

Advantages

  • Suitable for high-voltage applications
  • Low conduction losses
  • Enhanced thermal performance

Disadvantages

  • Higher gate capacitance may require careful driver design
  • Sensitivity to overvoltage conditions

Working Principles

The SIHF12N60E-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switched-mode power supplies - Motor drives - Inverters - Power factor correction circuits

Detailed and Complete Alternative Models

  • IRFP460: Similar voltage and current ratings
  • STW12NK60Z: Comparable characteristics and package type
  • FDPF12N60NZ: Alternative with similar specifications

In conclusion, the SIHF12N60E-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management applications. Its advantages include suitability for high-voltage applications, low conduction losses, and enhanced thermal performance. However, it may require careful driver design due to higher gate capacitance and can be sensitive to overvoltage conditions. This MOSFET finds extensive use in switched-mode power supplies, motor drives, inverters, and power factor correction circuits. Additionally, alternative models such as the IRFP460, STW12NK60Z, and FDPF12N60NZ offer comparable features and can be considered based on specific application requirements.

רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של SIHF12N60E-GE3 בפתרונות טכניים

  1. What is the maximum voltage rating of SIHF12N60E-GE3?

    • The maximum voltage rating of SIHF12N60E-GE3 is 600V.
  2. What is the continuous drain current of SIHF12N60E-GE3?

    • The continuous drain current of SIHF12N60E-GE3 is 12A.
  3. What is the on-state resistance of SIHF12N60E-GE3?

    • The on-state resistance of SIHF12N60E-GE3 is typically 0.6 ohms.
  4. What type of package does SIHF12N60E-GE3 come in?

    • SIHF12N60E-GE3 comes in a TO-220 Full-Pak package.
  5. Is SIHF12N60E-GE3 suitable for high-frequency switching applications?

    • Yes, SIHF12N60E-GE3 is suitable for high-frequency switching applications.
  6. What is the maximum junction temperature of SIHF12N60E-GE3?

    • The maximum junction temperature of SIHF12N60E-GE3 is 150°C.
  7. Does SIHF12N60E-GE3 have built-in protection features?

    • No, SIHF12N60E-GE3 does not have built-in protection features and may require external circuitry for protection.
  8. Can SIHF12N60E-GE3 be used in automotive applications?

    • Yes, SIHF12N60E-GE3 can be used in automotive applications.
  9. What are the typical applications for SIHF12N60E-GE3?

    • Typical applications for SIHF12N60E-GE3 include motor control, power supplies, and inverters.
  10. What is the gate-source threshold voltage of SIHF12N60E-GE3?

    • The gate-source threshold voltage of SIHF12N60E-GE3 is typically 2.5V to 4V.