SIHA240N60E-GE3

Introduction

The SIHA240N60E-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and functional features. In this entry, we will provide an overview of the SIHA240N60E-GE3, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The SIHA240N60E-GE3 is used as a switching device in power electronics applications.
• Characteristics: High voltage capability, low on-state resistance, fast switching speed, and high reliability.
• Package: TO-220AB
• Essence: The SIHA240N60E-GE3 is essential for efficient power management in various electronic systems.
• Packaging/Quantity: Typically packaged in reels or tubes containing multiple units.

Specifications

• Voltage Rating: 600V
• Current Rating: 240A
• On-State Resistance: 0.04Ω
• Gate Threshold Voltage: 2.5V
• Operating Temperature Range: -55°C to 175°C
• Package Type: TO-220AB

Detailed Pin Configuration

The SIHA240N60E-GE3 follows the standard pin configuration for a TO-220AB package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High Voltage Capability: The device can withstand high voltage levels, making it suitable for high-power applications.
• Low On-State Resistance: This feature minimizes power losses and improves efficiency.
• Fast Switching Speed: Enables rapid switching transitions, crucial for high-frequency applications.
• High Reliability: The device offers consistent performance and reliability over its operational lifespan.

Advantages and Disadvantages

Advantages

• High voltage capability
• Low on-state resistance
• Fast switching speed
• High reliability

Disadvantages

• Higher cost compared to lower-rated MOSFETs
• Requires careful handling to prevent static damage

Working Principles

The SIHA240N60E-GE3 operates based on the principle of field-effect transistors. When a sufficient gate-source voltage is applied, the device allows current to flow between the drain and source terminals. By controlling the gate voltage, the device can be switched on and off, enabling efficient power control in electronic circuits.

Detailed Application Field Plans

The SIHA240N60E-GE3 finds extensive use in the following application fields: - Switched-mode power supplies - Motor drives - Inverters - Welding equipment - Renewable energy systems

Detailed and Complete Alternative Models

• SIHB240N60E-GE3: Similar specifications with enhanced thermal performance
• SIHC240N60E-GE3: Lower on-state resistance for higher efficiency
• SIDA240N60E-GE3: Enhanced ruggedness for harsh operating conditions

In conclusion, the SIHA240N60E-GE3 power MOSFET offers high-performance characteristics and reliability, making it a preferred choice for various power electronics applications.

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