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SI7842DP-T1-GE3

SI7842DP-T1-GE3

Introduction

The SI7842DP-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Semiconductor Device
  • Use: Power switching and amplification in electronic circuits
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: DPAK (TO-252)
  • Essence: Power MOSFET for efficient power management
  • Packaging/Quantity: Typically packaged in reels with varying quantities based on customer requirements

Specifications

  • Voltage Rating: 100V
  • Current Rating: 10A
  • On-Resistance: 25mΩ
  • Gate Threshold Voltage: 2V
  • Operating Temperature Range: -55°C to 150°C
  • Package Type: DPAK (TO-252)

Detailed Pin Configuration

The SI7842DP-T1-GE3 follows the standard pin configuration for DPAK packages: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications
  • Low on-resistance minimizes power losses and improves efficiency
  • Fast switching speed enables rapid response in switching applications

Advantages and Disadvantages

Advantages

  • Efficient power management
  • High voltage capability
  • Low on-resistance

Disadvantages

  • Sensitive to overvoltage conditions
  • Limited current handling capacity compared to larger power MOSFETs

Working Principles

The SI7842DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The SI7842DP-T1-GE3 finds extensive use in the following application fields: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  • SI7844DP-T1-GE3: Higher current rating
  • SI7856DP-T1-GE3: Lower on-resistance
  • SI7868DP-T1-GE3: Enhanced thermal performance

In conclusion, the SI7842DP-T1-GE3 power MOSFET offers a balance of high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications. Its compact DPAK package and functional features make it an attractive choice for designers seeking efficient power solutions.

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של SI7842DP-T1-GE3 בפתרונות טכניים

  1. What is the maximum voltage rating for SI7842DP-T1-GE3?

    • The maximum voltage rating for SI7842DP-T1-GE3 is 60V.
  2. What is the maximum continuous drain current for SI7842DP-T1-GE3?

    • The maximum continuous drain current for SI7842DP-T1-GE3 is 6.3A.
  3. What is the typical threshold voltage for SI7842DP-T1-GE3?

    • The typical threshold voltage for SI7842DP-T1-GE3 is 1.5V.
  4. What is the on-resistance for SI7842DP-T1-GE3?

    • The on-resistance for SI7842DP-T1-GE3 is typically 25mΩ.
  5. What is the maximum power dissipation for SI7842DP-T1-GE3?

    • The maximum power dissipation for SI7842DP-T1-GE3 is 2.5W.
  6. What are the recommended operating temperature range for SI7842DP-T1-GE3?

    • The recommended operating temperature range for SI7842DP-T1-GE3 is -55°C to 150°C.
  7. Is SI7842DP-T1-GE3 RoHS compliant?

    • Yes, SI7842DP-T1-GE3 is RoHS compliant.
  8. What is the package type for SI7842DP-T1-GE3?

    • SI7842DP-T1-GE3 comes in a PowerPAK® SO-8 package.
  9. Does SI7842DP-T1-GE3 have overcurrent protection?

    • Yes, SI7842DP-T1-GE3 features overcurrent protection.
  10. Can SI7842DP-T1-GE3 be used in automotive applications?

    • Yes, SI7842DP-T1-GE3 is suitable for use in automotive applications as it meets AEC-Q101 standards.