התמונה עשויה להיות ייצוג.
ראה מפרטים לפרטי מוצר.
SI4860DY-T1-E3

SI4860DY-T1-E3

Product Overview

  • Category: Power MOSFET
  • Use: Switching applications in power supplies, motor control, and other electronic devices
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: SOIC-8
  • Essence: Power management component for efficient energy conversion
  • Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage Rating: 30V
  • Continuous Drain Current: 11A
  • RDS(ON): 9.5mΩ
  • Gate Threshold Voltage: 1.5V
  • Total Gate Charge: 15nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  • Pin 1: Source
  • Pin 2: Gate
  • Pin 3: Drain
  • Pin 4: Not connected
  • Pin 5: Not connected
  • Pin 6: Drain
  • Pin 7: Gate
  • Pin 8: Source

Functional Features

  • Fast switching speed for improved efficiency
  • Low on-resistance minimizes power loss
  • Enhanced thermal performance for reliability

Advantages and Disadvantages

  • Advantages:
    • High efficiency
    • Low on-resistance
    • Fast switching speed
  • Disadvantages:
    • Sensitive to static electricity
    • Limited voltage rating

Working Principles

The SI4860DY-T1-E3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - DC-DC converters - Motor control circuits - Power management in portable electronics - LED lighting systems

Detailed and Complete Alternative Models

  • SI4840DY-T1-E3: Similar specifications with lower RDS(ON)
  • SI4890DY-T1-E3: Higher voltage rating with comparable on-resistance

Note: The above information is for reference purposes only. Always refer to the manufacturer's datasheet for accurate details.

Word Count: 306

רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של SI4860DY-T1-E3 בפתרונות טכניים

  1. What is the maximum operating voltage of SI4860DY-T1-E3?

    • The maximum operating voltage of SI4860DY-T1-E3 is typically 30V.
  2. What is the typical output current capability of SI4860DY-T1-E3?

    • The typical output current capability of SI4860DY-T1-E3 is around 3A.
  3. What is the typical on-resistance of SI4860DY-T1-E3?

    • The typical on-resistance of SI4860DY-T1-E3 is approximately 20mΩ.
  4. Can SI4860DY-T1-E3 be used for load switching applications?

    • Yes, SI4860DY-T1-E3 is suitable for load switching applications due to its low on-resistance and high current capability.
  5. What are the recommended input and output capacitance values for SI4860DY-T1-E3?

    • The recommended input and output capacitance values for SI4860DY-T1-E3 are typically in the range of a few nanofarads to tens of nanofarads.
  6. Is SI4860DY-T1-E3 suitable for battery management systems?

    • Yes, SI4860DY-T1-E3 can be used in battery management systems due to its low on-resistance and high efficiency.
  7. What is the thermal resistance of SI4860DY-T1-E3?

    • The thermal resistance of SI4860DY-T1-E3 is typically around 40°C/W.
  8. Can SI4860DY-T1-E3 be used in automotive applications?

    • Yes, SI4860DY-T1-E3 is suitable for automotive applications, as it meets the necessary requirements for such environments.
  9. What are the typical switching frequencies for SI4860DY-T1-E3?

    • The typical switching frequencies for SI4860DY-T1-E3 range from a few hundred kilohertz to several megahertz.
  10. Does SI4860DY-T1-E3 have built-in protection features?

    • Yes, SI4860DY-T1-E3 includes built-in protection features such as overcurrent protection and thermal shutdown to ensure safe operation in various technical solutions.