Vishay Siliconix
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2N4859JAN02

2N4859JAN02

Product Overview

Category

The 2N4859JAN02 belongs to the category of semiconductor devices.

Use

It is commonly used as a high-frequency amplifier in electronic circuits.

Characteristics

  • High-frequency performance
  • Low noise figure
  • High gain

Package

The 2N4859JAN02 is typically available in TO-92 packaging.

Essence

This product is essential for amplifying high-frequency signals with low noise interference.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Maximum Power Dissipation: 350 mW
  • Collector-Base Voltage: 30 V
  • Collector Current: 50 mA
  • Transition Frequency: 400 MHz
  • Noise Figure: 3 dB

Detailed Pin Configuration

The 2N4859JAN02 typically has three pins: 1. Base 2. Emitter 3. Collector

Functional Features

  • High-frequency signal amplification
  • Low noise interference
  • Suitable for RF applications

Advantages

  • Excellent high-frequency performance
  • Low noise figure
  • Versatile for RF circuit designs

Disadvantages

  • Limited power dissipation capability
  • Relatively low collector-base voltage rating

Working Principles

The 2N4859JAN02 operates by amplifying high-frequency signals while minimizing additional noise, making it suitable for various RF applications.

Detailed Application Field Plans

The 2N4859JAN02 is commonly used in: - Radio frequency amplifiers - Oscillator circuits - Communication systems

Detailed and Complete Alternative Models

Some alternative models to the 2N4859JAN02 include: - BF998 - BFR91A - NE46134

In conclusion, the 2N4859JAN02 is a crucial semiconductor device known for its high-frequency performance and low noise figure, making it an ideal choice for RF applications.

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של 2N4859JAN02 בפתרונות טכניים

  1. What is the 2N4859JAN02 transistor used for?

    • The 2N4859JAN02 transistor is commonly used in high-frequency amplifier and oscillator circuits.

  2. What are the key specifications of the 2N4859JAN02 transistor?

    • The 2N4859JAN02 transistor typically has a maximum power dissipation of 350mW, a voltage breakdown of 20V, and a frequency range up to 4GHz.

  3. Can the 2N4859JAN02 be used in RF applications?

    • Yes, the 2N4859JAN02 is suitable for use in radio frequency (RF) applications due to its high-frequency capabilities.

  4. What are the typical operating conditions for the 2N4859JAN02?

    • The 2N4859JAN02 transistor operates under standard conditions with a temperature range of -55°C to +150°C and a collector current of 10mA.

  5. Is the 2N4859JAN02 suitable for low-noise amplifier designs?

    • Yes, the 2N4859JAN02 is often used in low-noise amplifier (LNA) designs due to its low noise figure and high gain characteristics.

  6. What are the recommended biasing configurations for the 2N4859JAN02?

    • Commonly used biasing configurations for the 2N4859JAN02 include fixed bias, self-bias, and voltage-divider bias.

  7. Can the 2N4859JAN02 be used in high-frequency mixer circuits?

    • Yes, the 2N4859JAN02 can be utilized in high-frequency mixer circuits due to its high-frequency performance and linearity.

  8. Are there any specific precautions to consider when using the 2N4859JAN02 in technical solutions?

    • It's important to ensure proper grounding and shielding in high-frequency applications to minimize interference and maintain signal integrity.

  9. What are the typical package types available for the 2N4859JAN02?

    • The 2N4859JAN02 is commonly available in TO-92 and surface-mount packages, providing flexibility for different circuit designs.

  10. Where can I find detailed application notes for using the 2N4859JAN02 in technical solutions?

    • Detailed application notes for the 2N4859JAN02 can be found in the manufacturer's datasheet, which provides comprehensive guidance on circuit design and implementation.