SS1H10-M3/61T
Product Overview
- Belongs to: Semiconductor devices
- Category: Schottky diode
- Use: Rectification, voltage clamping, and protection in various electronic circuits
- Characteristics: Low forward voltage drop, fast switching, high current capability
- Package: SOD-123FL
- Essence: High-efficiency rectification and voltage clamping
- Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications
- Forward Voltage Drop: 0.38V @ 1A
- Reverse Voltage: 100V
- Forward Current: 1A
- Reverse Recovery Time: 15ns
- Operating Temperature Range: -65°C to +125°C
Detailed Pin Configuration
- Pin 1: Anode
- Pin 2: Cathode
Functional Features
- Fast switching speed
- Low power loss
- High efficiency
- Excellent thermal performance
Advantages
- Low forward voltage drop reduces power dissipation
- Fast switching speed minimizes switching losses
- High current capability allows for use in various applications
Disadvantages
- Higher cost compared to standard silicon diodes
- Sensitivity to overvoltage conditions
Working Principles
The SS1H10-M3/61T operates based on the Schottky barrier principle, where the metal-semiconductor junction provides low forward voltage drop and fast switching characteristics.
Detailed Application Field Plans
- Power supplies
- Voltage clamping circuits
- Reverse polarity protection
- DC-DC converters
- Solar panel bypass diodes
Detailed and Complete Alternative Models
- 1N5819
- BAT54S
- SB1100
This comprehensive entry provides a detailed overview of the SS1H10-M3/61T, covering its product information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של SS1H10-M3/61T בפתרונות טכניים
What is the SS1H10-M3/61T?
- The SS1H10-M3/61T is a high-speed switching diode designed for general-purpose applications in high-speed switching and rectification.
What are the key features of the SS1H10-M3/61T?
- The key features include a low forward voltage drop, fast switching speed, and high reliability, making it suitable for various technical solutions.
What are the typical applications of the SS1H10-M3/61T?
- Typical applications include high-speed switching circuits, freewheeling diodes, polarity protection, and rectification in power supplies and other electronic devices.
What is the maximum forward voltage of the SS1H10-M3/61T?
- The maximum forward voltage is typically around 0.7V at a forward current of 1A, making it efficient for low-power applications.
What is the reverse recovery time of the SS1H10-M3/61T?
- The reverse recovery time is very short, typically in the range of nanoseconds, enabling fast and efficient switching.
Is the SS1H10-M3/61T suitable for high-frequency applications?
- Yes, the SS1H10-M3/61T is designed for high-speed switching, making it suitable for high-frequency applications such as RF circuits and signal processing.
Does the SS1H10-M3/61T have a small form factor?
- Yes, the SS1H10-M3/61T is available in a small surface-mount package, making it ideal for compact and space-constrained designs.
What are the temperature specifications for the SS1H10-M3/61T?
- The SS1H10-M3/61T is designed to operate within a wide temperature range, typically from -55°C to 150°C, ensuring reliability in various environments.
Can the SS1H10-M3/61T handle high surge currents?
- Yes, the SS1H10-M3/61T has a high surge current capability, making it suitable for applications with transient overcurrent conditions.
Are there any recommended layout considerations when using the SS1H10-M3/61T?
- Yes, it is recommended to minimize the length of the traces connecting the diode to other components to reduce parasitic inductance and optimize performance. Additionally, proper thermal management is important to ensure long-term reliability.