BR93G66FVM-3AGTTR

Product Overview

Category: Integrated Circuit (IC)

Use: Non-volatile Memory

Characteristics: - Low power consumption - High-speed read and write operations - Wide operating voltage range - Small package size - High reliability

Package: SOP8 (Small Outline Package 8 pins)

Essence: The BR93G66FVM-3AGTTR is a non-volatile memory IC that provides high-speed read and write operations with low power consumption. It is commonly used in various electronic devices for data storage purposes.

Packaging/Quantity: The BR93G66FVM-3AGTTR is typically packaged in reels, with each reel containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

The BR93G66FVM-3AGTTR has the following specifications:

• Operating Voltage Range: 1.8V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Memory Capacity: 4Kbits (512 x 8 bits)
• Write Time: 5ms (typical)
• Read Time: 20μs (typical)
• Data Retention: 100 years (at 55°C)

Detailed Pin Configuration

The BR93G66FVM-3AGTTR has a SOP8 package with the following pin configuration:

1. Chip Enable (CE)
2. Serial Clock (SCK)
3. Serial Data Input/Output (SI/O)
4. Ground (GND)
5. Write Protect (WP)
6. Vcc (Power Supply)
7. NC (No Connection)
8. Serial Data Output (SO)

Functional Features

The BR93G66FVM-3AGTTR offers the following functional features:

• Non-volatile memory storage
• High-speed serial communication interface
• Write protection capability
• Low power consumption during standby mode
• Automatic page write and sequential read operations

Advantages and Disadvantages

Advantages: - High-speed read and write operations - Wide operating voltage range allows compatibility with various systems - Small package size enables space-saving designs - High reliability ensures data integrity and longevity

Disadvantages: - Limited memory capacity (4Kbits) - Relatively slower write time compared to some other memory ICs

Working Principles

The BR93G66FVM-3AGTTR utilizes a combination of EEPROM (Electrically Erasable Programmable Read-Only Memory) and CMOS (Complementary Metal-Oxide-Semiconductor) technologies. It stores data in non-volatile memory cells, which can be electrically erased and reprogrammed.

During operation, the chip enable (CE), serial clock (SCK), and serial data input/output (SI/O) pins are used to communicate with the IC. The write protect (WP) pin provides write protection functionality, preventing accidental modification of stored data.

Detailed Application Field Plans

The BR93G66FVM-3AGTTR is widely used in various electronic devices that require non-volatile memory for data storage. Some common application fields include:

1. Consumer Electronics:

   • Smartphones
   • Tablets
   • Digital cameras
   • Portable media players

2. Automotive:

   • Engine control units
   • Infotainment systems
   • Instrument clusters

3. Industrial Automation:

   • Programmable logic controllers (PLCs)
   • Human-machine interfaces (HMIs)
   • Data loggers

4. Communication Systems:

   • Routers
   • Switches
   • Modems

Detailed and Complete Alternative Models

1. BR93G66F-WE2: Similar specifications and features, but with a different package (SOT23-5).
2. AT24C04: EEPROM IC with higher memory capacity (4Kbits) and similar operating characteristics.
3. CAT24C02: EEPROM IC with lower memory capacity (2Kbits) and similar operating characteristics.

These alternative models can be considered based on specific application requirements and compatibility with existing designs.

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