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BR24G08FJ-3GTE2

BR24G08FJ-3GTE2

Product Overview

Category

BR24G08FJ-3GTE2 belongs to the category of electrically erasable and programmable read-only memory (EEPROM) chips.

Use

This chip is commonly used for non-volatile data storage in various electronic devices such as microcontrollers, computers, and consumer electronics.

Characteristics

  • Electrically erasable and programmable
  • Non-volatile memory
  • High reliability and durability
  • Low power consumption
  • Wide operating voltage range

Package

BR24G08FJ-3GTE2 comes in a small form factor package, typically a 8-pin SOP (Small Outline Package).

Essence

The essence of BR24G08FJ-3GTE2 lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

These chips are usually packaged in reels or tubes, with each reel or tube containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer and customer requirements.

Specifications

  • Memory capacity: 8 kilobits (1 kilobyte)
  • Interface: I2C (Inter-Integrated Circuit)
  • Operating voltage: 1.7V to 5.5V
  • Operating temperature range: -40°C to +85°C
  • Write endurance: 1 million cycles
  • Data retention: 100 years

Detailed Pin Configuration

The BR24G08FJ-3GTE2 chip has the following pin configuration:

  1. VCC: Power supply voltage
  2. GND: Ground reference
  3. SDA: Serial data input/output for I2C communication
  4. SCL: Serial clock input for I2C communication
  5. WP: Write protect pin for hardware protection
  6. NC: No connection
  7. NC: No connection
  8. VSS: Ground reference

Functional Features

  • High-speed data transfer using I2C interface
  • Byte-level random access for efficient data retrieval
  • Hardware write protection to prevent accidental modification
  • Low standby current for power-saving applications
  • Built-in error detection and correction mechanisms

Advantages and Disadvantages

Advantages

  • Reliable and durable non-volatile memory
  • Wide operating voltage range allows compatibility with various systems
  • Low power consumption for energy-efficient designs
  • Compact form factor suitable for space-constrained applications
  • High-speed data transfer for quick access to stored information

Disadvantages

  • Limited storage capacity compared to other memory technologies
  • Relatively higher cost per kilobyte of storage compared to some alternatives
  • Requires an external microcontroller or host device for data manipulation

Working Principles

BR24G08FJ-3GTE2 utilizes EEPROM technology, which allows for electrically erasing and programming data. The chip stores information in a grid of memory cells, each capable of holding one bit of data. To read or write data, the chip communicates with an external microcontroller or host device using the I2C interface.

Detailed Application Field Plans

BR24G08FJ-3GTE2 finds applications in various fields, including but not limited to: - Automotive electronics - Industrial automation - Consumer electronics - Medical devices - Smart home systems

Detailed and Complete Alternative Models

Some alternative models to BR24G08FJ-3GTE2 include: - AT24C08 (Atmel) - 24AA08 (Microchip) - M24C08 (STMicroelectronics) - CAT24C08 (ON Semiconductor)

These alternative models offer similar functionality and can be used as replacements depending on specific requirements.

In conclusion, BR24G08FJ-3GTE2 is a reliable and versatile EEPROM chip that provides non-volatile data storage for various electronic devices. Its high-speed data transfer, low power consumption, and wide operating voltage range make it suitable for a wide range of applications. However, its limited storage capacity and higher cost per kilobyte should be considered when choosing an alternative.

רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של BR24G08FJ-3GTE2 בפתרונות טכניים

Sure! Here are 10 common questions and answers related to the application of BR24G08FJ-3GTE2 in technical solutions:

  1. Question: What is BR24G08FJ-3GTE2?
    Answer: BR24G08FJ-3GTE2 is a specific model of EEPROM (Electrically Erasable Programmable Read-Only Memory) chip manufactured by ROHM Semiconductor.

  2. Question: What is the capacity of BR24G08FJ-3GTE2?
    Answer: BR24G08FJ-3GTE2 has a capacity of 8 kilobits, which is equivalent to 1024 bytes or 1 kilobyte.

  3. Question: What are the typical applications of BR24G08FJ-3GTE2?
    Answer: BR24G08FJ-3GTE2 is commonly used for storing small amounts of non-volatile data in various electronic devices, such as consumer electronics, industrial equipment, and automotive systems.

  4. Question: How does BR24G08FJ-3GTE2 connect to a microcontroller or other devices?
    Answer: BR24G08FJ-3GTE2 uses an I2C (Inter-Integrated Circuit) interface for communication with the microcontroller or other devices. It requires two lines: SDA (Serial Data) and SCL (Serial Clock).

  5. Question: Can BR24G08FJ-3GTE2 be reprogrammed multiple times?
    Answer: Yes, BR24G08FJ-3GTE2 is electrically erasable and programmable, allowing it to be reprogrammed multiple times during its lifespan.

  6. Question: What is the operating voltage range of BR24G08FJ-3GTE2?
    Answer: BR24G08FJ-3GTE2 operates within a voltage range of 1.7V to 5.5V, making it compatible with a wide range of systems.

  7. Question: Does BR24G08FJ-3GTE2 have any built-in security features?
    Answer: Yes, BR24G08FJ-3GTE2 supports a write protection function that can be used to prevent unauthorized modifications to the stored data.

  8. Question: What is the maximum operating frequency of BR24G08FJ-3GTE2?
    Answer: BR24G08FJ-3GTE2 can operate at a maximum frequency of 400 kHz, which is the standard speed for I2C communication.

  9. Question: Can BR24G08FJ-3GTE2 operate in harsh environments?
    Answer: Yes, BR24G08FJ-3GTE2 is designed to withstand extended temperature ranges and is suitable for use in industrial and automotive applications.

  10. Question: Are there any specific programming requirements for BR24G08FJ-3GTE2?
    Answer: BR24G08FJ-3GTE2 requires a specific programming algorithm and timing sequence, which can be found in the datasheet provided by ROHM Semiconductor.