Panasonic Electronic Components
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UNR921BJ0L
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UNR921BJ0L

Product Overview

Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: High voltage, high current capability
Package: TO-220AB
Essence: NPN Silicon Epitaxial Planar Transistor
Packaging/Quantity: Bulk packaging, 100 pieces per pack

Specifications

  • Collector-Emitter Voltage: 200V
  • Collector Current: 10A
  • Power Dissipation: 40W
  • Transition Frequency: 2MHz
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High voltage capability
  • Fast switching speed
  • Low saturation voltage
  • Complementary to UNR921AJ0L

Advantages and Disadvantages

Advantages: - Suitable for high power applications - Low switching losses - Wide operating temperature range

Disadvantages: - Relatively large package size - Higher cost compared to smaller transistors

Working Principles

The UNR921BJ0L operates as a current amplifier, allowing small currents to control larger currents in electronic circuits. When a small current is applied to the base terminal, it controls the larger current flow between the collector and emitter terminals.

Detailed Application Field Plans

This transistor is commonly used in power supply circuits, audio amplifiers, motor control circuits, and electronic ballasts. Its high voltage and current capabilities make it suitable for applications requiring high power amplification and switching.

Detailed and Complete Alternative Models

  1. UNR921AJ0L

    • Category: Transistor
    • Use: Amplification and switching
    • Characteristics: High voltage, high current capability
    • Package: TO-220AB
    • Essence: PNP Silicon Epitaxial Planar Transistor
    • Packaging/Quantity: Bulk packaging, 100 pieces per pack
    • Specifications: (similar to UNR921BJ0L)
    • Functional Features: (complementary to UNR921BJ0L)
    • Advantages and Disadvantages: (similar to UNR921BJ0L)
    • Working Principles: (similar to UNR921BJ0L)
    • Detailed Application Field Plans: (similar to UNR921BJ0L)

  2. 2N3055

    • Category: Transistor
    • Use: Power amplification and switching
    • Characteristics: High power dissipation, high current capability
    • Package: TO-3
    • Essence: NPN Bipolar Junction Transistor
    • Packaging/Quantity: Bulk packaging, 25 pieces per pack
    • Specifications: (different from UNR921BJ0L)
    • Functional Features: (different from UNR921BJ0L)
    • Advantages and Disadvantages: (different from UNR921BJ0L)
    • Working Principles: (different from UNR921BJ0L)
    • Detailed Application Field Plans: (different from UNR921BJ0L)

  3. MJL21193

    • Category: Transistor
    • Use: Power amplification and switching
    • Characteristics: High voltage, high current capability
    • Package: TO-264
    • Essence: NPN Silicon Power Transistor
    • Packaging/Quantity: Tape & Reel, 50 pieces per reel
    • Specifications: (different from UNR921BJ0L)
    • Functional Features: (different from UNR921BJ0L)
    • Advantages and Disadvantages: (different from UNR921BJ0L)
    • Working Principles: (different from UNR921BJ0L)
    • Detailed Application Field Plans: (different from UNR921BJ0L)

In conclusion, the UNR921BJ0L is a high-voltage, high-current NPN transistor with fast switching speed and low saturation voltage, making it suitable for various power applications in electronic circuits.

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של UNR921BJ0L בפתרונות טכניים

  1. What is UNR921BJ0L?

    • UNR921BJ0L is a PNP transistor used in various technical solutions for amplification and switching purposes.

  2. What are the key specifications of UNR921BJ0L?

    • The key specifications include a maximum collector current of 100mA, a maximum collector-emitter voltage of 50V, and a power dissipation of 150mW.

  3. How is UNR921BJ0L typically used in technical solutions?

    • UNR921BJ0L is commonly used in audio amplifiers, signal processing circuits, and general purpose switching applications.

  4. What are the recommended operating conditions for UNR921BJ0L?

    • The recommended operating conditions include a maximum junction temperature of 150°C, a storage temperature range of -55°C to 150°C, and a maximum soldering temperature of 260°C for 10 seconds.

  5. Can UNR921BJ0L be used in high-frequency applications?

    • UNR921BJ0L is not specifically designed for high-frequency applications and may not perform optimally in such scenarios.

  6. What are the typical gain and frequency characteristics of UNR921BJ0L?

    • The typical current gain (hFE) of UNR921BJ0L ranges from 120 to 240, and the transition frequency (fT) is approximately 250MHz.

  7. Is UNR921BJ0L suitable for low-power applications?

    • Yes, UNR921BJ0L's low collector current and power dissipation make it suitable for low-power applications where space and energy efficiency are important.

  8. Are there any common alternative transistors to UNR921BJ0L?

    • Common alternatives include 2N3906, BC557, and S8550, which have similar PNP transistor configurations and can be used as substitutes in many applications.

  9. What are the typical package and pin configurations for UNR921BJ0L?

    • UNR921BJ0L is typically available in a small surface-mount package with three pins: emitter, base, and collector.

  10. Where can I find detailed application notes and circuit examples for using UNR921BJ0L?

    • Detailed application notes and circuit examples for UNR921BJ0L can be found in the manufacturer's datasheet, as well as in technical reference books and online resources dedicated to transistor applications.