NSVMUN2112T1G

Product Overview

• Category: Transistor
• Use: Amplification and switching in electronic circuits
• Characteristics: High voltage, high current capability, low power consumption
• Package: TO-261-3 (SOT-223)
• Essence: NPN Bipolar Junction Transistor
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage - Collector Emitter Breakdown (Max): 50V
• Current - Collector (Ic) (Max): 600mA
• Power - Max: 625mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 1V
• Transition Frequency: 250MHz
• Noise Figure (dB Typ @ f): 2.5dB @ 1kHz

Detailed Pin Configuration

1. Base
2. Emitter
3. Collector

Functional Features

• High voltage capability
• Low saturation voltage
• Fast switching speed
• Low noise figure

Advantages

• Suitable for high-speed switching applications
• Compact SOT-223 package
• Low power consumption

Disadvantages

• Limited maximum current compared to some alternatives
• Moderate transition frequency

Working Principles

The NSVMUN2112T1G is a bipolar junction transistor that operates by controlling the flow of current between its collector and emitter terminals using a small current at its base terminal. This allows it to amplify or switch electronic signals in various circuit configurations.

Detailed Application Field Plans

The NSVMUN2112T1G is commonly used in audio amplifiers, motor control circuits, and general-purpose switching applications. Its high voltage capability makes it suitable for use in power supply circuits as well.

Detailed and Complete Alternative Models

• BC547B: Similar NPN transistor with lower voltage and current ratings
• 2N3904: General-purpose NPN transistor with comparable characteristics
• MMBT2222A: SMD NPN transistor with similar specifications

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This content provides a comprehensive overview of the NSVMUN2112T1G transistor, covering its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models. If you need further details on any specific aspect, feel free to ask!