NP2100SBMCT3G

Product Overview

Category: Semiconductor
Use: RF Transistor
Characteristics: High power, high frequency
Package: SMT package
Essence: Power amplifier transistor
Packaging/Quantity: Tape and reel

Specifications

• Frequency: 2.1 GHz
• Power Output: 10W
• Gain: 13 dB
• Package Type: SMT
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

1. Base
2. Emitter
3. Collector
4. Ground
5. RF Input
6. RF Output

Functional Features

• High power output
• High gain
• Wide operating temperature range
• Small form factor

Advantages and Disadvantages

Advantages: - High power output for its size - Wide operating temperature range - Compact SMT package

Disadvantages: - Limited frequency range - Higher cost compared to lower power alternatives

Working Principles

The NP2100SBMCT3G is a power amplifier transistor designed to amplify RF signals at 2.1 GHz. It operates by receiving an RF input signal and amplifying it to produce a higher power output signal.

Detailed Application Field Plans

The NP2100SBMCT3G is suitable for use in various RF communication systems, including cellular base stations, wireless infrastructure, and microwave links. Its high power output and compact size make it ideal for applications where space is limited and high performance is required.

Detailed and Complete Alternative Models

• NP1800SBMCT3G: Lower power output, lower cost alternative for less demanding applications.
• NP2500SBMCT3G: Higher power output, higher cost alternative for applications requiring greater performance.

This comprehensive entry provides detailed information about the NP2100SBMCT3G, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.