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PDTA113ZK,115

PDTA113ZK,115

Product Overview

  • Belongs to: Semiconductor category
  • Use: Amplification and switching of signals in electronic circuits
  • Characteristics: Small signal transistor, high current gain, low voltage drop
  • Package: SOT416 (SC-75)
  • Essence: NPN bipolar junction transistor
  • Packaging/Quantity: Reel 3K per 7" Q1/T1

Specifications

  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Current - Collector (Ic) (Max): 100mA
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 5V
  • Transition Frequency: 250MHz

Detailed Pin Configuration

  1. Base
  2. Emitter
  3. Collector

Functional Features

  • High current gain
  • Low voltage drop
  • Fast switching speed

Advantages

  • Small package size
  • Suitable for high-density surface mount applications
  • High current gain

Disadvantages

  • Limited power dissipation capability
  • Limited collector current

Working Principles

PDTA113ZK,115 operates based on the principles of bipolar junction transistors, where the current flow between the collector and emitter is controlled by the base current.

Detailed Application Field Plans

This transistor is commonly used in audio amplifiers, signal amplification circuits, and switching applications in various electronic devices.

Detailed and Complete Alternative Models

  • BC847B,215
  • BC846B,215
  • BC847C,215
  • BC846C,215
  • BC847BW,115
  • BC846BW,115

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של PDTA113ZK,115 בפתרונות טכניים

  1. What is PDTA113ZK,115?

    • PDTA113ZK,115 is a high-performance NPN bipolar transistor in a small SOT883 package, designed for general-purpose amplifier and switching applications.
  2. What are the key features of PDTA113ZK,115?

    • The key features include high current gain, low collector-emitter saturation voltage, and low equivalent on-resistance.
  3. What are the typical applications of PDTA113ZK,115?

    • Typical applications include audio amplification, signal processing, level shifting, and interface circuits.
  4. What is the maximum collector current of PDTA113ZK,115?

    • The maximum collector current is 100mA.
  5. What is the maximum collector-emitter voltage of PDTA113ZK,115?

    • The maximum collector-emitter voltage is 50V.
  6. What is the thermal resistance of PDTA113ZK,115?

    • The thermal resistance from junction to ambient is 625°C/W.
  7. Can PDTA113ZK,115 be used in high-frequency applications?

    • Yes, it can be used in high-frequency applications due to its high transition frequency (fT) of 250MHz.
  8. Is PDTA113ZK,115 suitable for battery-powered applications?

    • Yes, it is suitable for battery-powered applications due to its low collector-emitter saturation voltage.
  9. What are the recommended operating conditions for PDTA113ZK,115?

    • The recommended operating conditions include a collector current of 10mA to 100mA and a collector-emitter voltage of 5V to 50V.
  10. Where can I find detailed technical specifications and application notes for PDTA113ZK,115?

    • Detailed technical specifications and application notes can be found in the product datasheet provided by the manufacturer.