M83261G13

Product Overview

• Category: Electronic Component
• Use: Signal Amplification and Conditioning
• Characteristics:
  • High Gain
  • Low Noise
  • Wide Bandwidth
• Package: TO-92
• Essence: Transistor
• Packaging/Quantity: Bulk packaging, 100 units per pack

Specifications

• Type: NPN Bipolar Junction Transistor
• Maximum Collector Current (Ic): 500mA
• Maximum Collector-Emitter Voltage (Vce): 30V
• Maximum Power Dissipation (Pd): 625mW
• Transition Frequency (ft): 250MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The M83261G13 transistor has three pins:

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• Signal amplification and conditioning
• High gain allows for weak signals to be amplified effectively
• Low noise ensures minimal interference with the signal
• Wide bandwidth enables the transistor to handle a broad range of frequencies

Advantages and Disadvantages

Advantages

• High gain amplification
• Low noise operation
• Wide bandwidth for versatile applications
• Compact TO-92 package for easy integration
• Suitable for low-power applications

Disadvantages

• Limited maximum collector current (500mA)
• Restricted maximum collector-emitter voltage (30V)
• Relatively low power dissipation capability (625mW)

Working Principles

The M83261G13 is an NPN bipolar junction transistor that operates based on the principles of amplification and control of electrical signals. When a small current flows into the base terminal (B), it controls a larger current flow between the collector (C) and emitter (E) terminals. This amplification allows weak signals to be boosted to a level suitable for further processing or transmission.

Detailed Application Field Plans

The M83261G13 transistor finds applications in various fields, including:

1. Audio Amplification: Used in audio systems to amplify low-level audio signals.
2. Sensor Interface: Enables signal conditioning and amplification for sensors such as temperature, pressure, and light sensors.
3. Communication Systems: Utilized in RF circuits for signal amplification and modulation.
4. Industrial Control: Employed in control circuits for motor control, power regulation, and signal conditioning.

Detailed and Complete Alternative Models

1. M83261G12: Similar specifications but with higher maximum collector current (800mA).
2. M83261G14: Similar specifications but with lower noise characteristics.
3. M83261G15: Similar specifications but with extended operating temperature range (-65°C to +175°C).

Note: The above alternative models are provided as examples and may not cover all available alternatives in the market.

This entry provides an overview of the M83261G13 transistor, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.