PSMN7R5-30MLDX

Introduction

The PSMN7R5-30MLDX is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

Category: Power MOSFET
Use: The PSMN7R5-30MLDX is used as a switching element in power electronics applications, such as motor control, power supplies, and inverters.
Characteristics: This MOSFET offers low on-state resistance, high current capability, and fast switching speed, making it suitable for high-efficiency power conversion.
Package: The PSMN7R5-30MLDX is available in a TO-220 package, which provides thermal efficiency and mechanical robustness.
Essence: The essence of this MOSFET lies in its ability to handle high power levels with minimal losses, contributing to energy-efficient designs.
Packaging/Quantity: It is typically supplied in reels or tubes containing multiple units, catering to production-scale requirements.

Specifications

Voltage Rating: 75V
Current Rating: 30A
On-State Resistance: 7.5mΩ
Gate Threshold Voltage: 2V
Maximum Operating Temperature: 175°C
Package Type: TO-220

Detailed Pin Configuration

The PSMN7R5-30MLDX features a standard TO-220 pin configuration with three pins: gate, drain, and source. The pinout arrangement is as follows: 1. Gate (G): Input for controlling the MOSFET's conductivity. 2. Drain (D): Connection point for the load or power supply. 3. Source (S): Common reference point for the MOSFET's internal circuitry.

Functional Features

Low On-State Resistance: Enables efficient power transfer and minimizes conduction losses.
Fast Switching Speed: Facilitates rapid transitions between on and off states, crucial for high-frequency applications.
High Current Capability: Allows the MOSFET to handle substantial power levels without saturation.

Advantages and Disadvantages

Advantages

High efficiency in power conversion applications
Robust thermal performance due to the TO-220 package
Fast response time for dynamic load changes

Disadvantages

Relatively higher cost compared to standard MOSFETs
Requires careful consideration of gate drive circuitry for optimal performance

Working Principles

The PSMN7R5-30MLDX operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET enters a low-resistance state, allowing power to flow through. Conversely, reducing the gate voltage turns off the MOSFET, interrupting the power flow.

Detailed Application Field Plans

The PSMN7R5-30MLDX finds extensive use in the following application fields: - Motor Control: Driving and controlling electric motors in industrial and automotive systems. - Power Supplies: Switch-mode power supplies and DC-DC converters benefit from the MOSFET's efficiency and high current handling. - Inverters: Used in renewable energy systems and motor drives for converting DC power to AC.

Detailed and Complete Alternative Models

For applications requiring similar performance and characteristics, alternative models to the PSMN7R5-30MLDX include: - Infineon IPP60R190C6 - STMicroelectronics STP55NF06L - Vishay SIHP30N60E

In summary, the PSMN7R5-30MLDX power MOSFET offers high-performance characteristics suitable for a wide range of power electronics applications, providing efficient power handling and fast switching capabilities.

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