PSMN1R5-40ES,127
Product Overview
Category: Power MOSFET
Use: High-efficiency power management
Characteristics: Low on-state resistance, high-speed switching, low gate charge
Package: TO-220AB
Essence: N-channel enhancement mode Field-Effect Transistor (FET)
Packaging/Quantity: Tape and reel, 800 units
Specifications
- Drain-source voltage: 100V
- Continuous drain current: 100A
- On-state resistance: 1.5mΩ
- Total gate charge: 60nC
- Operating temperature range: -55°C to 175°C
Detailed Pin Configuration
The PSMN1R5-40ES,127 features a standard TO-220AB pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- High efficiency due to low on-state resistance
- Fast switching for improved performance
- Low gate charge for reduced power loss
Advantages and Disadvantages
Advantages: - High efficiency in power management applications - Fast switching capability - Low power loss due to low gate charge
Disadvantages: - Higher cost compared to some alternative models - Limited availability in certain regions
Working Principles
The PSMN1R5-40ES,127 operates as an N-channel enhancement mode FET, allowing for efficient control of power flow in various applications. When a suitable gate voltage is applied, the device allows current to flow between the drain and source terminals, enabling effective power management.
Detailed Application Field Plans
This MOSFET is well-suited for use in: - Switching power supplies - Motor control systems - DC-DC converters - Inverters
Detailed and Complete Alternative Models
PSMN2R0-40YS,127
- Category: Power MOSFET
- Use: High-efficiency power management
- Characteristics: Low on-state resistance, high-speed switching
- Package: TO-220AB
- Essence: N-channel enhancement mode FET
- Packaging/Quantity: Tape and reel, 800 units
PSMN3R0-40YS,127
- Category: Power MOSFET
- Use: High-efficiency power management
- Characteristics: Low on-state resistance, high-speed switching
- Package: TO-220AB
- Essence: N-channel enhancement mode FET
- Packaging/Quantity: Tape and reel, 800 units
In conclusion, the PSMN1R5-40ES,127 is a high-performance power MOSFET suitable for various power management applications, offering efficient operation and fast switching capabilities. While it may have some limitations in terms of cost and availability, its advantages make it a compelling choice for power management needs.
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What is the PSMN1R5-40ES,127?
- The PSMN1R5-40ES,127 is a power MOSFET designed for use in various technical solutions requiring high efficiency and reliability.
What is the maximum voltage rating of PSMN1R5-40ES,127?
- The maximum voltage rating of PSMN1R5-40ES,127 is 40V.
What is the typical current rating of PSMN1R5-40ES,127?
- The typical current rating of PSMN1R5-40ES,127 is [insert value if available].
What are the typical applications of PSMN1R5-40ES,127?
- PSMN1R5-40ES,127 is commonly used in applications such as power supplies, motor control, and DC-DC converters.
What is the on-state resistance of PSMN1R5-40ES,127?
- The on-state resistance of PSMN1R5-40ES,127 is typically low, making it suitable for high-efficiency applications.
Does PSMN1R5-40ES,127 require a heat sink?
- Depending on the application and power dissipation, a heat sink may be required for optimal thermal performance.
Is PSMN1R5-40ES,127 suitable for automotive applications?
- Yes, PSMN1R5-40ES,127 is often used in automotive electronics due to its robustness and performance characteristics.
What are the thermal characteristics of PSMN1R5-40ES,127?
- The thermal characteristics include low thermal resistance and efficient heat dissipation.
Can PSMN1R5-40ES,127 be used in parallel configurations?
- Yes, PSMN1R5-40ES,127 can be used in parallel to handle higher currents or improve system reliability.
Are there any recommended layout considerations for using PSMN1R5-40ES,127?
- It is recommended to follow the manufacturer's guidelines for PCB layout, thermal management, and proper gate driving to ensure optimal performance and reliability.