BCX70J,235

Product Category: Transistor

Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification of electrical signals - Characteristics: Small signal NPN transistor, low power dissipation, high current gain - Package: SOT-23 - Essence: Silicon NPN epitaxial planar transistor - Packaging/Quantity: Tape and reel, 3000 pieces per reel

Specifications: - Collector-Base Voltage (VCBO): 45V - Collector-Emitter Voltage (VCEO): 45V - Emitter-Base Voltage (VEBO): 6V - Collector Current (IC): 100mA - Power Dissipation (Ptot): 250mW - Transition Frequency (fT): 250MHz

Detailed Pin Configuration: - Pin 1 (Emitter): Connected to the emitter region of the transistor - Pin 2 (Base): Connected to the base region of the transistor - Pin 3 (Collector): Connected to the collector region of the transistor

Functional Features: - High current gain - Low power dissipation - Small package size

Advantages and Disadvantages: - Advantages: - High current gain allows for amplification of weak signals - Low power dissipation reduces heat generation - Small package size enables compact circuit design - Disadvantages: - Limited maximum collector current compared to other transistors - Moderate transition frequency may limit high-frequency applications

Working Principles: The BCX70J,235 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify electrical signals.

Detailed Application Field Plans: - Audio amplification circuits - Sensor interface circuits - Signal conditioning circuits

Detailed and Complete Alternative Models: - BCX70H,235 - BCX70K,235 - BCX70L,235

This comprehensive entry provides a detailed understanding of the BCX70J,235 transistor, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.