1PS76SB10Z Product Overview

Introduction

The 1PS76SB10Z is a semiconductor product that belongs to the category of Schottky barrier diodes. This entry provides an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models of the 1PS76SB10Z.

Basic Information Overview

• Category: Schottky Barrier Diode
• Use: Rectification, voltage clamping, and detection applications
• Characteristics: Low forward voltage drop, fast switching speed, low leakage current
• Package: SOD-323 package
• Essence: High-frequency rectification and voltage clamping
• Packaging/Quantity: Typically available in reels with varying quantities

Specifications

• Forward Voltage Drop: Typically 0.3V at 1A
• Reverse Voltage: 20V
• Maximum Continuous Forward Current: 1A
• Operating Temperature Range: -65°C to +125°C
• Storage Temperature Range: -65°C to +150°C

Detailed Pin Configuration

The 1PS76SB10Z typically has three pins: Anode, Cathode, and the SOD-323 package's marking.

Functional Features

• Fast switching speed enables high-frequency rectification
• Low forward voltage drop minimizes power loss
• Low leakage current enhances efficiency in voltage clamping applications

Advantages and Disadvantages

Advantages

• Fast switching speed
• Low forward voltage drop
• Low leakage current

Disadvantages

• Limited reverse voltage capability
• Sensitivity to overvoltage conditions

Working Principles

The 1PS76SB10Z operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for fast switching and low forward voltage drop characteristics.

Detailed Application Field Plans

The 1PS76SB10Z is commonly used in: - Switching power supplies - Voltage clamping circuits - High-frequency rectification applications

Detailed and Complete Alternative Models

Some alternative models to the 1PS76SB10Z include: - 1N5817 - BAT54S - SS12

In conclusion, the 1PS76SB10Z Schottky barrier diode offers fast switching speed, low forward voltage drop, and low leakage current, making it suitable for various rectification, voltage clamping, and detection applications. Its limitations include sensitivity to overvoltage conditions and limited reverse voltage capability. Understanding its specifications, pin configuration, functional features, and alternative models can aid in its effective utilization in different electronic circuits.

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