TE28F640J3D75B TR

Product Overview

Category

TE28F640J3D75B TR belongs to the category of flash memory chips.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: The TE28F640J3D75B TR has a storage capacity of 64 megabits (8 megabytes).
• Fast read and write speeds: Allows for quick access to stored data.
• Reliable performance: Designed to withstand harsh environmental conditions and provide long-term data retention.
• Low power consumption: Optimized for energy efficiency.

Package

The TE28F640J3D75B TR is available in a compact package that ensures easy integration into electronic devices. It is commonly packaged in a small outline integrated circuit (SOIC) form factor.

Essence

The essence of TE28F640J3D75B TR lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The TE28F640J3D75B TR is typically sold in reels or trays containing multiple units. The exact quantity may vary depending on the supplier and customer requirements.

Specifications

• Memory Type: Flash
• Memory Size: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SOIC

Detailed Pin Configuration

The TE28F640J3D75B TR features a parallel interface with a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. BYTE#
35. WE#
36. CE#
37. OE#
38. WP#
39. RY/BY#
40. DQ0
41. DQ1
42. DQ2
43. DQ3
44. DQ4
45. DQ5
46. DQ6
47. DQ7
48. VSS

Functional Features

• High-speed data transfer: The TE28F640J3D75B TR supports fast read and write operations, enabling efficient data handling.
• Error correction: Built-in error correction mechanisms ensure data integrity and reliability.
• Block erase capability: Allows for the erasure of specific memory blocks, facilitating efficient data management.
• Write protection: The WP# pin can be used to protect stored data from accidental modification.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Reliable performance in various environmental conditions
• Low power consumption

Disadvantages

• Limited endurance: Flash memory has a finite number of program/erase cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The TE28F640J3D75B TR utilizes the principles of flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s) and can be read or modified through specific electrical operations.

Detailed Application Field Plans

The TE28F640J3D75B TR is widely used in various electronic devices that require non-volatile storage, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• TE28F640J3D75B TR is a specific model within Intel's TE28F640J3D series. Other models within this series may have different specifications and features.
• Alternative flash memory chips from different manufacturers include:
  • Samsung K9F5608U0D
  • Micron MT29F64G08CBABA
  • Toshiba TC58NVG2S0FTA00

These alternative models offer