MT51J256M32HF-70:B

Product Overview

Category

MT51J256M32HF-70:B belongs to the category of semiconductor memory products.

Use

This product is primarily used as a high-density dynamic random-access memory (DRAM) module for various electronic devices and systems.

Characteristics

• High density: The MT51J256M32HF-70:B offers a large storage capacity, allowing for efficient data storage and retrieval.
• Fast data access: With a high-speed interface, this DRAM module enables quick data transfer and processing.
• Low power consumption: The product is designed to minimize power usage, making it suitable for energy-efficient applications.
• Reliable performance: The MT51J256M32HF-70:B ensures stable and consistent operation, providing reliable memory storage.

Package

The MT51J256M32HF-70:B is available in a compact and standardized package, which facilitates easy integration into electronic devices and systems.

Essence

The essence of this product lies in its ability to provide high-density memory storage with fast data access, low power consumption, and reliable performance.

Packaging/Quantity

The MT51J256M32HF-70:B is typically packaged individually or in bulk quantities, depending on the requirements of the customer or application.

Specifications

• Memory Type: Dynamic Random-Access Memory (DRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 32M words x 8 bits
• Operating Voltage: 1.35V
• Speed Grade: DDR3-1600 (PC3-12800)
• Package Type: FBGA (Fine-Pitch Ball Grid Array)
• Pin Count: 96 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT51J256M32HF-70:B has a total of 96 pins, which are assigned specific functions for proper operation. The detailed pin configuration is as follows:

(Pin Number) - (Pin Name) - (Function) 1 - VSS - Ground 2 - DQ0 - Data Input/Output Bit 0 3 - DQ1 - Data Input/Output Bit 1 4 - DQ2 - Data Input/Output Bit 2 5 - DQ3 - Data Input/Output Bit 3 6 - DQ4 - Data Input/Output Bit 4 7 - DQ5 - Data Input/Output Bit 5 8 - DQ6 - Data Input/Output Bit 6 9 - DQ7 - Data Input/Output Bit 7 10 - VDD - Power Supply 11 - VDDQ - Power Supply for I/O Buffers 12 - /RAS - Row Address Strobe 13 - /CAS - Column Address Strobe 14 - /WE - Write Enable 15 - /CS - Chip Select 16 - BA0 - Bank Address Bit 0 17 - BA1 - Bank Address Bit 1 18 - A0 - Address Bit 0 19 - A1 - Address Bit 1 20 - A2 - Address Bit 2 21 - A3 - Address Bit 3 22 - A4 - Address Bit 4 23 - A5 - Address Bit 5 24 - A6 - Address Bit 6 25 - A7 - Address Bit 7 26 - A8 - Address Bit 8 27 - A9 - Address Bit 9 28 - A10 - Address Bit 10 29 - A11 - Address Bit 11 30 - A12 - Address Bit 12 31 - A13 - Address Bit 13 32 - A14 - Address Bit 14 33 - A15 - Address Bit 15 34 - A16 - Address Bit 16 35 - A17 - Address Bit 17 36 - A18 - Address Bit 18 37 - A19 - Address Bit 19 38 - A20 - Address Bit 20 39 - VREFCA - Reference Voltage for Calibration 40 - VSS - Ground 41-96 - Reserved - Reserved for Future Use

Functional Features

The MT51J256M32HF-70:B offers the following functional features:

1. High-speed data transfer: The product supports fast data access and transfer, enabling efficient processing of large amounts of information.
2. Low power consumption: With its optimized design, this DRAM module consumes minimal power, making it suitable for battery-powered devices.
3. Error correction: The MT51J256M32HF-70:B incorporates error correction techniques to enhance data integrity and reliability.
4. Refresh mechanism: The product includes a built-in refresh mechanism to maintain data integrity over extended periods of time.

Advantages and Disadvantages

Advantages

• High-density memory storage