MT47H512M8WTR-25E:C

Product Overview

Category

MT47H512M8WTR-25E:C belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact size

Package

MT47H512M8WTR-25E:C is available in a small form factor package, which allows for easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

MT47H512M8WTR-25E:C is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Model: MT47H512M8WTR-25E:C
• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 512 Megabits (64 Megabytes)
• Speed: 25E (DDR3-1600)
• Operating Voltage: 1.5V
• Interface: Double Data Rate (DDR)
• Pin Count: 60 pins
• Organization: 8 banks x 8,192 rows x 4,096 columns

Detailed Pin Configuration

The pin configuration of MT47H512M8WTR-25E:C is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. DM0
45. DM1
46. VSS
47. CK
48. CKE
49. ODT
50. RESET#
51. VREF
52. VSS
53. VDD
54. VDD
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Low power consumption in standby mode

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Compact size for easy integration
• Low power consumption

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance compared to non-volatile memory

Working Principles

MT47H512M8WTR-25E:C operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in a matrix of capacitors, which are organized into rows and columns. The data is accessed by sending commands and addresses to the memory controller, which then activates the appropriate row and column to read or write data.

Detailed Application Field Plans

MT47H512M8WTR-25E:C finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to MT47H512M8WTR-25E:C include: - MT47H256M8EB-25E:C - MT47H128M16RT-25E:C - MT47H64M8CF-25E:C - MT47H32M16HR-25E:C

These alternative models offer similar functionality and characteristics, but may differ in terms of capacity, speed, or pin configuration.

In conclusion, MT47H512M8WTR-25E:C is a high-speed synchronous DRAM that provides efficient data storage and retrieval