MT47H128M8JN-3:H

Product Overview

Category

MT47H128M8JN-3:H belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and accessing data quickly.

Characteristics

• High-speed data transfer
• Volatile memory
• Requires periodic refreshing
• Large storage capacity
• Low power consumption

Package

MT47H128M8JN-3:H is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval in various electronic devices.

Packaging/Quantity

MT47H128M8JN-3:H is typically packaged individually and sold in quantities of one or multiples, depending on the customer's requirements.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 1 GB
• Organization: 128M words x 8 bits
• Speed: 1333 MHz
• Voltage: 1.5V
• CAS Latency: CL9
• Refresh Rate: 8K cycles/64ms

Detailed Pin Configuration

The MT47H128M8JN-3:H module has a total of 204 pins arranged in a specific configuration. The pinout diagram is as follows:

Functional Features

• High-speed data transfer rate for improved system performance.
• Low power consumption for energy-efficient operation.
• Automatic refresh mechanism to maintain data integrity.
• Error correction code (ECC) support for enhanced reliability.
• On-die termination (ODT) for signal integrity optimization.

Advantages

• Fast data transfer speed improves overall system performance.
• Large storage capacity allows for the storage of a significant amount of data.
• Low power consumption helps in reducing energy usage and prolonging battery life in portable devices.
• ECC support ensures data integrity by detecting and correcting errors.
• ODT feature optimizes signal quality, reducing noise and improving system stability.

Disadvantages

• Volatile memory requires constant power supply to retain stored data.
• Periodic refreshing is necessary to prevent data loss.
• Relatively higher cost compared to other types of memory modules.

Working Principles

MT47H128M8JN-3:H operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When the system requires accessing specific data, it retrieves it from the appropriate memory cells.

Detailed Application Field Plans

MT47H128M8JN-3:H finds applications in various electronic devices and computer systems, including: - Laptops and notebooks - Desktop computers - Servers - Gaming consoles - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H128M8JN-3:H include: - MT47H64M16HR-25E: 2 GB DDR3 SDRAM module with higher capacity. - MT47H256M8EB-25E: 4 GB DDR3 SDRAM module with larger storage capacity. - MT47H512M8HQ-25E: 8 GB DDR3 SDRAM module with even higher capacity.

These alternative models offer different capacities and features to cater to varying requirements.

In conclusion, MT47H128M8JN-3:H is a DDR3 SDRAM module that provides high-speed data transfer, large storage capacity, and low power consumption. It is widely used in various electronic devices and computer systems. While it offers advantages such as improved system performance and data integrity, it also has limitations like volatile memory and periodic refreshing requirements. Alternative models with different capacities are available to suit specific needs.