MT47H128M8JN-25E:H

Product Overview

Category

MT47H128M8JN-25E:H belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance

Package

MT47H128M8JN-25E:H is available in a compact and durable package that ensures protection against external factors such as moisture and physical damage.

Essence

The essence of MT47H128M8JN-25E:H lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of MT47H128M8JN-25E:H units. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: MT47H128M8JN-25E:H
• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Capacity: 128 Megabits (16 Megabytes)
• Speed Grade: 25E
• Operating Voltage: 2.5V
• Organization: 128M words x 8 bits
• Interface: Parallel
• Clock Frequency: Up to 400 MHz
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT47H128M8JN-25E:H is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VDD
38. /WE
39. /CAS
40. /RAS
41. /CS
42. /CKE
43. /BA0
44. /BA1
45. VSS
46. /LDQM
47. /UDQM
48. /RESET

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency
• Low-power standby mode

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Reliable performance
• Flexible configuration options

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance in terms of write cycles

Working Principles

MT47H128M8JN-25E:H operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information can be accessed and modified by sending appropriate signals through the pins of the device.

Detailed Application Field Plans

MT47H128M8JN-25E:H finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H128M8JN-25E:H are: - MT47H64M16HR-25E:H - MT47H256M8EB-25E:H - MT47H512M4EB-25E:H - MT47H1G8FB-25E:H

These models offer similar functionality and characteristics, but with varying capacities and configurations.

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