MT47H128M16RT-25E:C

Product Overview

Category

MT47H128M16RT-25E:C belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size
• Wide temperature range (-40°C to 85°C)

Package

MT47H128M16RT-25E:C is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval in various electronic devices.

Packaging/Quantity

MT47H128M16RT-25E:C is typically packaged in trays or reels and is available in quantities suitable for both individual and bulk purchases.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 2GB
• Organization: 128M words x 16 bits
• Operating Voltage: 1.5V
• Speed Grade: PC3-12800 (DDR3-1600)
• Refresh Rate: 8K cycles/32ms
• CAS Latency: CL11
• Burst Length: 8

Detailed Pin Configuration

The MT47H128M16RT-25E:C chip has a total of 60 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. BA0
37. BA1
38. RAS#
39. CAS#
40. WE#
41. CK
42. CKE
43. CS#
44. DM0
45. DM1
46. VSS
47. VDD
48. ODT
49. DQS0
50. DQS#0
51. DQS1
52. DQS#1
53. VSS
54. VDD
55. NC
56. NC
57. VSS
58. VDD
59. NC
60. NC

Functional Features

• High-speed data transfer rate
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Burst mode operation for efficient data transfer
• Error correction code (ECC) support for data reliability

Advantages and Disadvantages

Advantages

• Fast data access speed
• Low power consumption
• Compact size
• Wide temperature range suitability
• ECC support for data reliability

Disadvantages

• Limited capacity (2GB)
• DDR3 technology may not be compatible with newer devices using DDR4 or DDR5 memory.

Working Principles

MT47H128M16RT-25E:C operates based on the principles of dynamic random-access memory. It stores data in capacitors within the memory cells, which need to be periodically refreshed to maintain the stored information. When a device requires access to specific data, the memory controller sends appropriate signals to retrieve the data from the memory cells.

Detailed Application Field Plans

MT47H128M16RT-25E:C is widely used in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Workstations - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H128M16RT-25E:C are: - MT47H64M16HR-25E:C - MT47H256M16HR-25E:C - MT47H512M16HR-25E:C - MT47H1G16HR-25E:C

These models offer different capacities and may have varying specifications, but they serve similar purposes and can be suitable replacements depending on the specific requirements