MT46V64M8BN-6 L:F

Basic Information Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - Type: Synchronous Dynamic Random Access Memory (SDRAM) - Organization: 64 Megabit (8 Megabyte) - Speed: 6 ns - Package: FBGA (Fine-Pitch Ball Grid Array) - Essence: High-speed and high-density memory solution - Packaging/Quantity: Tray, 250 units per tray

Specifications

• Supply Voltage: 2.5V ± 0.2V
• Operating Temperature Range: -40°C to +85°C
• Clock Frequency: 166 MHz
• Data Rate: 333 Mbps/pin
• Burst Length: 4 or 8
• Interface: Parallel
• Pin Count: 60 pins
• Power Consumption: 1.8W (max)

Detailed Pin Configuration

The MT46V64M8BN-6 L:F has a total of 60 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. VSS
37. /CAS
38. /RAS
39. /WE
40. /CS
41. BA0
42. BA1
43. VDD
44. CLK
45. CKE
46. /CKE
47. /LDQM
48. /UDQM
49. VSS
50. DQS0
51. DQS1
52. DM0
53. DM1
54. VDD
55. VREF
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS

Functional Features

• High-speed operation for efficient data transfer
• Synchronous interface for synchronized communication with the system
• Burst mode support for faster consecutive data access
• Low power consumption for energy efficiency
• On-die termination (ODT) for improved signal integrity
• Auto-refresh and self-refresh modes for maintaining data integrity during power fluctuations

Advantages and Disadvantages

Advantages: - High-speed performance suitable for demanding applications - Large memory capacity for storing a significant amount of data - Low power consumption for energy-efficient operation - Compact FBGA package for space-saving designs - On-die termination for improved signal quality

Disadvantages: - Limited compatibility with older systems that do not support synchronous memory interfaces - Relatively higher cost compared to other memory technologies like NAND flash

Working Principles

The MT46V64M8BN-6 L:F is a synchronous dynamic random access memory (SDRAM) device. It operates by synchronizing data transfers with an external clock signal. The memory cells store data in the form of electrical charges, which need to be periodically refreshed to maintain data integrity. The device supports burst mode, allowing for consecutive data access without the need for repeated address input.

Detailed Application Field Plans

The MT46V64M8BN-6 L:F is commonly used in various applications that require high-speed and high-density memory solutions. Some of the potential application fields include:

1. Computer Systems: Used as main memory (RAM) in desktop computers, laptops, and servers.
2. Networking Equipment: Employed in routers, switches, and network storage devices for fast data processing.
3. Consumer Electronics: Integrated into gaming consoles, set-top boxes, and digital televisions for efficient data handling.
4. Industrial Control Systems: Utilized in automation systems, robotics, and control panels for reliable data storage and retrieval.
5. Automotive Electronics: Incorporated in infotainment systems, navigation units, and advanced driver-assistance systems (ADAS) for enhanced performance.

Detailed and Complete Alternative Models

1. MT46V32M16P-6T: 512 Megabit (32 Megabyte) SDRAM with similar characteristics and pin configuration.
2. MT47H64