MT46V16M16P-5B AIT:M

Product Overview

Category

The MT46V16M16P-5B AIT:M belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-density storage: The MT46V16M16P-5B AIT:M offers a large storage capacity, allowing for the storage of a significant amount of data.
• Fast data access: With its high-speed data transfer rate, this DRAM chip enables quick access to stored information.
• Low power consumption: The MT46V16M16P-5B AIT:M is designed to operate efficiently with minimal power consumption.
• Reliable performance: This product ensures reliable and stable performance, making it suitable for various applications.

Package and Quantity

The MT46V16M16P-5B AIT:M is available in a compact and standardized package. It is typically sold in quantities of one or more, depending on the requirements of the user.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 16 Meg x 16
• Operating Voltage: 2.5V ± 0.2V
• Speed Grade: -5B
• Package Type: 60-ball FBGA
• Temperature Range: Commercial (0°C to +70°C)

Pin Configuration

The MT46V16M16P-5B AIT:M features a specific pin configuration that facilitates its integration into electronic systems. The detailed pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. VSS
41. BA0
42. BA1
43. /CKE
44. /CLK
45. /DQM0
46. /DQM1
47. VDD
48. VSS
49. VREF
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS

Functional Features

The MT46V16M16P-5B AIT:M offers the following functional features: - Random access: Allows for the retrieval of data from any memory location without the need to sequentially read through the entire memory. - Refresh capability: The DRAM chip automatically refreshes stored data to maintain its integrity over time. - Burst mode operation: Enables rapid consecutive data transfers, improving overall system performance.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data access speed
• Low power consumption
• Reliable performance

Disadvantages

• Requires periodic refresh cycles to maintain data integrity
• Sensitive to external electrical noise

Working Principles

The MT46V16M16P-5B AIT:M operates based on the principles of dynamic random access memory. It stores data in capacitors within its memory cells, which need to be periodically refreshed to retain their charge. When a specific memory location is accessed, the corresponding row and column addresses are provided, allowing the retrieval or storage of data.

Application Field Plans

The MT46V16M16P-5B AIT:M finds applications in various fields, including: 1. Personal computers and laptops 2. Mobile devices such as smartphones and tablets 3. Networking equipment 4. Automotive electronics 5. Industrial control systems

Alternative Models

Other alternative models that offer similar functionality to the MT46V16M16P-5B AIT:M include: - MT46V32M16P-5B AIT:M - MT46H16M16LFBF-6 IT