MT46V128M4TG-75:D TR

Product Overview

Category

The MT46V128M4TG-75:D TR belongs to the category of dynamic random access memory (DRAM) products.

Use

This product is primarily used for data storage and retrieval in various electronic devices such as computers, smartphones, tablets, and gaming consoles.

Characteristics

• High-speed operation: The MT46V128M4TG-75:D TR offers fast data access and transfer rates, enabling efficient processing of large amounts of information.
• Large storage capacity: With a capacity of 128 megabits (16 megabytes), this DRAM module can store a significant amount of data.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT46V128M4TG-75:D TR is packaged in a small form factor, allowing for easy integration into various electronic systems.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Packaging/Quantity

The MT46V128M4TG-75:D TR is typically packaged in trays or reels, providing protection during transportation and storage. The quantity per package varies depending on the manufacturer's specifications.

Specifications

• Part Number: MT46V128M4TG-75:D TR
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 128 Megabits (16 Megabytes)
• Operating Voltage: 2.5 Volts
• Speed Grade: 75
• Package Type: TSOP II
• Pin Count: 66

Detailed Pin Configuration

The MT46V128M4TG-75:D TR has a total of 66 pins arranged as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. A21
42. A22
43. A23
44. A24
45. A25
46. A26
47. A27
48. A28
49. A29
50. A30
51. A31
52. /RAS
53. /CAS
54. /WE
55. /CS0
56. /CS1
57. /CS2
58. /CS3
59. /CKE
60. /CLK
61. /DQM0
62. /DQM1
63. /DQM2
64. /DQM3
65. VDD
66. VSS

Functional Features

The MT46V128M4TG-75:D TR offers the following functional features:

• Random access: The memory cells can be accessed in any order, allowing for flexible data retrieval.
• Burst mode: The product supports burst read and write operations, enabling efficient transfer of consecutive data.
• Auto-refresh: The DRAM module automatically refreshes its memory cells to maintain data integrity over time.
• Self-timed operation: The device internally generates the necessary timing signals, simplifying system integration.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data processing.
• Large storage capacity accommodates extensive data requirements.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic systems.
• RoHS compliance ensures environmental friendliness.

Disadvantages

• Relatively higher latency compared to other types of memory.
• Susceptible to data loss if not properly refreshed.
• Limited endurance due to the finite number of write cycles.

Working Principles

The MT46V128M4TG-75:D TR operates based on the principles of dynamic random access memory. It stores data as electrical charges in tiny capacitors within each memory cell. To read or write data, the memory controller sends appropriate signals to the specific row and column addresses,