Micron Technology Inc.
התמונה עשויה להיות ייצוג.
ראה מפרטים לפרטי מוצר.
MT41K512M8RH-125 IT:E
צפה בפרטים DataSheets

MT41K512M8RH-125 IT:E

Product Overview

Category

The MT41K512M8RH-125 IT:E belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

  • High-speed operation: The MT41K512M8RH-125 IT:E offers fast data transfer rates, enabling efficient processing of large amounts of information.
  • Large capacity: With a capacity of 512 megabits, this DRAM module can store a significant amount of data.
  • Low power consumption: The module is designed to consume minimal power, making it energy-efficient.
  • Reliable performance: It provides reliable and stable performance, ensuring data integrity.

Package

The MT41K512M8RH-125 IT:E is available in a compact and standardized package, which facilitates easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide high-speed and reliable data storage and retrieval capabilities, enhancing the overall performance of electronic devices.

Packaging/Quantity

The MT41K512M8RH-125 IT:E is typically packaged individually or in bulk quantities, depending on the requirements of the customer or manufacturer.

Specifications

  • Part Number: MT41K512M8RH-125 IT:E
  • Memory Type: DDR3 SDRAM
  • Capacity: 512 Megabits
  • Speed: 125 MHz
  • Organization: 64M x 8
  • Voltage Supply: 1.5V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: FBGA (Fine-Pitch Ball Grid Array)
  • Pin Count: 78

Detailed Pin Configuration

The MT41K512M8RH-125 IT:E has a total of 78 pins, which are arranged as follows:

  • Pin 1: VSS (Ground)
  • Pin 2: DQ0 (Data Input/Output Bit 0)
  • Pin 3: DQ1 (Data Input/Output Bit 1)
  • ...
  • Pin 78: VDD (Power Supply)

Functional Features

  • High-speed data transfer: The MT41K512M8RH-125 IT:E offers fast read and write operations, enabling quick access to stored data.
  • Auto-refresh capability: It supports automatic refreshing of data, ensuring data integrity over extended periods.
  • Burst mode operation: The module can perform burst mode operations, allowing for efficient data transfer.

Advantages and Disadvantages

Advantages

  • High-speed operation enhances overall system performance.
  • Large capacity enables storage of significant amounts of data.
  • Low power consumption contributes to energy efficiency.
  • Reliable performance ensures data integrity.

Disadvantages

  • Limited compatibility with older systems that do not support DDR3 SDRAM.

Working Principles

The MT41K512M8RH-125 IT:E operates based on the principles of dynamic random access memory. It stores data in capacitors within the memory cells, which need to be periodically refreshed to maintain the stored information. The module communicates with the system's memory controller to facilitate data transfer and retrieval.

Detailed Application Field Plans

The MT41K512M8RH-125 IT:E is widely used in various applications, including: - Personal computers - Laptops - Servers - Networking equipment - Gaming consoles - Embedded systems

Its high-speed operation and large capacity make it suitable for demanding tasks such as gaming, multimedia processing, and data-intensive applications.

Detailed and Complete Alternative Models

Some alternative models to the MT41K512M8RH-125 IT:E include: - MT41K256M16TW-107 IT:P - MT41K1G8SN-125 IT:E - MT41K512M16HA-125 IT:E - MT41K256M16TW-107 IT:K

These alternative models offer similar functionality and characteristics, providing options for different system requirements.

Word count: 511 words

רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של MT41K512M8RH-125 IT:E בפתרונות טכניים

Sure! Here are 10 common questions and answers related to the application of MT41K512M8RH-125 IT:E in technical solutions:

  1. Question: What is the capacity of the MT41K512M8RH-125 IT:E memory module?
    Answer: The MT41K512M8RH-125 IT:E has a capacity of 4 gigabits (512 megabytes).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT41K512M8RH-125 IT:E is 1.35V.

  3. Question: Can I use this memory module in a laptop or desktop computer?
    Answer: Yes, the MT41K512M8RH-125 IT:E can be used in both laptops and desktop computers.

  4. Question: Is this memory module compatible with DDR3 or DDR4 systems?
    Answer: The MT41K512M8RH-125 IT:E is compatible with DDR3 systems.

  5. Question: What is the maximum clock speed supported by this memory module?
    Answer: The MT41K512M8RH-125 IT:E supports a maximum clock speed of 125 MHz.

  6. Question: Can I use multiple MT41K512M8RH-125 IT:E modules together for increased capacity?
    Answer: Yes, you can use multiple modules together to increase the overall memory capacity.

  7. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: Yes, the MT41K512M8RH-125 IT:E supports ECC for error detection and correction.

  8. Question: What is the form factor of this memory module?
    Answer: The MT41K512M8RH-125 IT:E has a small outline dual in-line memory module (SODIMM) form factor.

  9. Question: Can I use this memory module in a server or networking equipment?
    Answer: Yes, the MT41K512M8RH-125 IT:E can be used in server and networking equipment that supports DDR3 memory.

  10. Question: Is this memory module suitable for high-performance applications?
    Answer: Yes, the MT41K512M8RH-125 IT:E is designed for high-performance applications that require reliable and fast memory access.

Please note that these answers are based on general information about the MT41K512M8RH-125 IT:E memory module. It's always recommended to refer to the manufacturer's documentation for specific details and compatibility with your technical solution.