MT29F64G08TAAWP:A TR

Product Overview

Category

MT29F64G08TAAWP:A TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08TAAWP:A TR offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Compact package: The product comes in a small form factor, making it suitable for space-constrained devices.
• Low power consumption: MT29F64G08TAAWP:A TR is designed to consume minimal power, enhancing battery life in portable devices.

Package and Quantity

The MT29F64G08TAAWP:A TR is packaged in a surface-mount technology (SMT) package. It is typically sold in reels containing a specific quantity, usually 1000 units per reel.

Specifications

• Storage Capacity: 64 GB
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Package Type: TSOP (Thin Small Outline Package)

Pin Configuration

The detailed pin configuration of MT29F64G08TAAWP:A TR is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CLE: Command latch enable
5. ALE: Address latch enable
6. CE: Chip enable
7. RE: Read enable
8. WE: Write enable
9. R/B: Ready/Busy status
10. DQ0-DQ7: Data input/output

(Note: This is a simplified representation. The actual product may have additional pins and functionalities.)

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of data at the block level, improving efficiency.
• Random Access: Provides quick access to specific data within the memory.
• Wear-Leveling Algorithm: Distributes write operations evenly across memory blocks, extending the lifespan of the NAND flash memory.
• Error Correction Code (ECC): Incorporates ECC algorithms to detect and correct errors during data transfer.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate ensures quick access to stored information.
• Reliable performance over extended periods.
• Compact package size suitable for space-constrained devices.
• Low power consumption enhances battery life in portable devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it becomes unreliable.
• Susceptible to data loss if not properly managed or backed up.

Working Principles

MT29F64G08TAAWP:A TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. Writing involves applying a high voltage to the gate to modify the charge level.

Detailed Application Field Plans

MT29F64G08TAAWP:A TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models to MT29F64G08TAAWP:A TR include: - MT29F64G08CBAAA:TR - MT29F64G08CBACAWP:TR - MT29F64G08CBACAWP-IT:TR - MT29F64G08CBACAWP-IT:E

(Note: The list of alternative models is not exhaustive and may vary based on availability and specific requirements.)

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