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MT29F4G16ABBDAHC:D TR

MT29F4G16ABBDAHC:D TR

Product Overview

Category

MT29F4G16ABBDAHC:D TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: MT29F4G16ABBDAHC:D TR offers a storage capacity of 4 gigabits (4 Gb).
  • Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
  • Reliable performance: The NAND flash memory is designed to be durable and reliable, ensuring data integrity over extended periods.
  • Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
  • Compact package: The MT29F4G16ABBDAHC:D TR comes in a small form factor, enabling its integration into compact electronic devices.
  • RoHS compliant: The product adheres to the Restriction of Hazardous Substances directive, ensuring environmental safety.

Package and Quantity

The MT29F4G16ABBDAHC:D TR is packaged in a surface-mount technology (SMT) package. It is typically supplied in reels or trays, with varying quantities depending on customer requirements.

Specifications

  • Storage Capacity: 4 Gb
  • Interface: NAND
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Transfer Rate: Up to 400 Mbps
  • Package Type: TSOP (Thin Small Outline Package)
  • Pin Count: 48

Detailed Pin Configuration

The pin configuration of MT29F4G16ABBDAHC:D TR is as follows:

  1. VCC
  2. ALE
  3. CLE
  4. CE#
  5. RE#
  6. WE#
  7. R/B#
  8. WP#
  9. NC
  10. NC
  11. NC
  12. NC
  13. NC
  14. NC
  15. NC
  16. NC
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. GND

Functional Features

  • Page Read/Program/Erase Operations: The MT29F4G16ABBDAHC:D TR supports efficient read, program, and erase operations at the page level.
  • Block Management: It incorporates advanced block management algorithms to optimize performance and extend the lifespan of the memory.
  • Error Correction Code (ECC): The NAND flash memory utilizes ECC techniques to detect and correct errors, ensuring data integrity.
  • Wear Leveling: It employs wear leveling algorithms to distribute write operations evenly across the memory cells, preventing premature wear-out.
  • Bad Block Management: The device includes mechanisms to identify and manage bad blocks, enhancing overall reliability.

Advantages and Disadvantages

Advantages

  • High storage capacity allows for ample data storage.
  • Fast data transfer rate enables quick access to stored information.
  • Low power consumption prolongs battery life in portable devices.
  • Compact package facilitates integration into space-constrained designs.
  • RoHS compliance ensures environmental friendliness.

Disadvantages

  • Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
  • Relatively higher cost compared to other storage technologies like hard disk drives.

Working Principles

The MT29F4G16ABBDAHC:D TR utilizes the principles of NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The presence or absence of charge determines the stored data value (0 or 1).

During read operations, the controller applies voltages to specific pins to access the desired memory cell and retrieve the stored data. Program and erase operations involve applying higher voltages to modify the charge on the floating gate, allowing for data programming or erasure.

Detailed Application Field Plans

The MT29F4G16ABBDAHC:D TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Embedded systems

Alternative Models

רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של MT29F4G16ABBDAHC:D TR בפתרונות טכניים

Sure! Here are 10 common questions and answers related to the application of MT29F4G16ABBDAHC:D TR in technical solutions:

  1. Q: What is the capacity of the MT29F4G16ABBDAHC:D TR flash memory? A: The MT29F4G16ABBDAHC:D TR flash memory has a capacity of 4 gigabits (Gb).

  2. Q: What is the voltage range supported by this flash memory? A: The MT29F4G16ABBDAHC:D TR flash memory supports a voltage range of 2.7V to 3.6V.

  3. Q: What is the interface used for communication with this flash memory? A: The MT29F4G16ABBDAHC:D TR flash memory uses a standard NAND Flash interface.

  4. Q: Can this flash memory be used in industrial applications? A: Yes, the MT29F4G16ABBDAHC:D TR flash memory is designed for industrial applications and operates reliably in harsh environments.

  5. Q: What is the maximum operating temperature range of this flash memory? A: The MT29F4G16ABBDAHC:D TR flash memory can operate within a temperature range of -40°C to +85°C.

  6. Q: Does this flash memory support wear-leveling algorithms? A: Yes, the MT29F4G16ABBDAHC:D TR flash memory supports built-in wear-leveling algorithms to ensure even distribution of write/erase cycles.

  7. Q: Is this flash memory compatible with various file systems? A: Yes, the MT29F4G16ABBDAHC:D TR flash memory is compatible with popular file systems like FAT32 and exFAT.

  8. Q: Can I use this flash memory in automotive applications? A: Yes, the MT29F4G16ABBDAHC:D TR flash memory is suitable for automotive applications and meets the required specifications.

  9. Q: What is the typical read/write speed of this flash memory? A: The MT29F4G16ABBDAHC:D TR flash memory has a typical read speed of 25 MB/s and a typical write speed of 6 MB/s.

  10. Q: Does this flash memory support hardware data protection features? A: Yes, the MT29F4G16ABBDAHC:D TR flash memory supports hardware data protection features like ECC (Error Correction Code) and bad block management.

Please note that these answers are based on general information about the MT29F4G16ABBDAHC:D TR flash memory and may vary depending on specific implementation details.