MT29F4G08ABCWC:C

Product Overview

Category

MT29F4G08ABCWC:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT29F4G08ABCWC:C is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of MT29F4G08ABCWC:C lies in its ability to store large amounts of data reliably and efficiently.

Packaging/Quantity

This product is typically packaged individually or in bulk quantities, depending on the requirements of the customer.

Specifications

• Storage Capacity: 4GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200MB/s (sequential read), Up to 100MB/s (sequential write)

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Page-level random access
• Block erase and program operations
• Error correction code (ECC) support
• Wear leveling algorithm for extended lifespan
• Bad block management

Advantages

• High storage capacity allows for ample data storage
• Fast read and write speeds enable quick data access
• Compact size facilitates integration into various devices
• Low power consumption prolongs battery life
• Error correction code ensures data integrity

Disadvantages

• Limited lifespan due to finite program/erase cycles
• Relatively higher cost compared to other memory technologies
• Susceptible to physical damage if mishandled

Working Principles

MT29F4G08ABCWC:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The data is accessed by applying appropriate voltages to the memory cells and reading or writing the stored charge.

Detailed Application Field Plans

MT29F4G08ABCWC:C finds extensive use in various electronic devices, including: - Smartphones and tablets for storing operating systems, applications, and user data - Digital cameras for storing high-resolution photos and videos - Solid-state drives (SSDs) for replacing traditional hard disk drives in computers, providing faster boot times and improved performance

Detailed and Complete Alternative Models

1. MT29F4G16ABADAWP:A - 8GB NAND Flash Memory with similar specifications but double the storage capacity.
2. MT29F2G08ABAEAWP:B - 2GB NAND Flash Memory with lower storage capacity but similar characteristics and functionality.

(Note: This list is not exhaustive and may vary based on availability and technological advancements.)

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