MT29F4G01AAADDHC-ITX:D

Product Overview

Category

MT29F4G01AAADDHC-ITX:D belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G01AAADDHC-ITX:D offers a storage capacity of 4GB.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over an extended period.
• Compact package: The MT29F4G01AAADDHC-ITX:D comes in a small form factor, making it suitable for space-constrained devices.
• Low power consumption: It consumes minimal power, contributing to energy efficiency in portable devices.

Package and Quantity

The MT29F4G01AAADDHC-ITX:D is available in a surface-mount package. Each package contains one unit of NAND flash memory.

Specifications

• Storage Capacity: 4GB
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200MB/s (Read), Up to 100MB/s (Write)
• Erase Block Size: 128KB
• Page Size: 2KB

Detailed Pin Configuration

The MT29F4G01AAADDHC-ITX:D has the following pin configuration:

1. VCC: Power supply voltage
2. CE: Chip enable
3. WE: Write enable
4. RE: Read enable
5. A0-A18: Address inputs
6. DQ0-DQ15: Data input/output
7. R/B: Ready/Busy status
8. CLE: Command latch enable
9. ALE: Address latch enable
10. WP: Write protect

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of entire blocks of memory for efficient data management.
• Random Access: Provides random access to any location within the memory, allowing for flexible data retrieval.
• Error Correction Code (ECC): Incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear Leveling: Implements wear-leveling techniques to evenly distribute write operations across the memory cells, prolonging the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Compact form factor
• Low power consumption
• Reliable performance

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it becomes unreliable.
• Susceptible to data loss: Power interruptions during write operations can lead to data corruption or loss.

Working Principles

The MT29F4G01AAADDHC-ITX:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. During programming or erasing, the charge is adjusted to represent the desired data state.

Detailed Application Field Plans

The MT29F4G01AAADDHC-ITX:D finds applications in various electronic devices that require non-volatile data storage. Some specific application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Provides storage for high-resolution photos and videos.
3. Solid-state drives (SSDs): Used as the primary storage medium in computers and laptops, offering faster boot times and improved system performance.

Detailed and Complete Alternative Models

1. MT29F4G08ABAEAWP-ITX
2. MT29F4G16ABADAWP-ITX
3. MT29F4G08ABBEAWP-ITX
4. MT29F4G16ABBDWAP-ITX

These alternative models offer similar storage capacities and features, providing flexibility in choosing the most suitable NAND flash memory for specific applications.

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