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MT29F2G08ABBEAHC-IT:E

MT29F2G08ABBEAHC-IT:E

Product Overview

Category

MT29F2G08ABBEAHC-IT:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F2G08ABBEAHC-IT:E offers a storage capacity of 2 gigabytes (GB), allowing for ample data storage.
  • Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
  • Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
  • Low power consumption: The MT29F2G08ABBEAHC-IT:E is energy-efficient, consuming minimal power during operation.
  • Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
  • RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring environmental safety.

Package and Quantity

The MT29F2G08ABBEAHC-IT:E is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

  • Storage Capacity: 2 GB
  • Interface: NAND
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Transfer Rate: Up to 200 megabytes per second (MB/s)
  • Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration of MT29F2G08ABBEAHC-IT:E is as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. CE: Chip enable
  4. RE: Read enable
  5. WE: Write enable
  6. A0-A18: Address inputs
  7. DQ0-DQ7: Data input/output
  8. R/B: Ready/Busy status
  9. CLE: Command latch enable
  10. ALE: Address latch enable

Note: The pin configuration may vary depending on the specific manufacturer's implementation.

Functional Features

  • Page Program: Allows data to be written into the memory cells in page-sized increments.
  • Block Erase: Enables erasing of data in large blocks, improving efficiency.
  • Random Access: Provides the ability to access data stored at any location within the memory.
  • Error Correction Code (ECC): Incorporates ECC algorithms to detect and correct errors during data read operations.
  • Wear Leveling: Distributes write operations evenly across the memory cells, extending the product's lifespan.

Advantages and Disadvantages

Advantages

  • High storage capacity for ample data storage needs.
  • Fast data transfer rate for quick read and write operations.
  • Reliable performance ensures consistent data access.
  • Low power consumption for energy-efficient operation.
  • Compact package allows integration into small-sized devices.
  • RoHS compliant, ensuring environmental safety.

Disadvantages

  • Limited erase/program cycles compared to other non-volatile memory technologies.
  • Relatively higher cost per gigabyte compared to alternative storage solutions.

Working Principles

The MT29F2G08ABBEAHC-IT:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. When data is written, the charge level of the memory cells is adjusted to represent the desired information. During read operations, the charge levels are measured to retrieve the stored data.

Application Field Plans

The MT29F2G08ABBEAHC-IT:E finds applications in various electronic devices that require non-volatile storage for data retention. Some common application fields include:

  1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
  2. Digital cameras: Provides storage for high-resolution photos and videos.
  3. Solid-state drives (SSDs): Used as primary storage in laptops and desktop computers.
  4. Industrial control systems: Enables data logging and firmware storage in industrial automation.
  5. Automotive electronics: Used for storing firmware, maps, and other critical data in automotive systems.

Alternative Models

Several alternative models with similar specifications and functionality are available in the market. Some notable alternatives to MT29F2G08ABBEAHC-IT:E include:

  1. Samsung K9K8G08U0D
  2. Toshiba TH58NVG6D2FLA89
  3. Micron MT

רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של MT29F2G08ABBEAHC-IT:E בפתרונות טכניים

  1. Question: What is the MT29F2G08ABBEAHC-IT:E?
    Answer: The MT29F2G08ABBEAHC-IT:E is a specific model of NAND flash memory chip commonly used in technical solutions.

  2. Question: What is the storage capacity of the MT29F2G08ABBEAHC-IT:E?
    Answer: The MT29F2G08ABBEAHC-IT:E has a storage capacity of 2 gigabytes (GB).

  3. Question: What is the interface used to connect the MT29F2G08ABBEAHC-IT:E to other components?
    Answer: The MT29F2G08ABBEAHC-IT:E uses a standard NAND flash interface for communication with other devices.

  4. Question: Can the MT29F2G08ABBEAHC-IT:E be used in embedded systems?
    Answer: Yes, the MT29F2G08ABBEAHC-IT:E is commonly used in embedded systems due to its reliability and high storage capacity.

  5. Question: Is the MT29F2G08ABBEAHC-IT:E compatible with different operating systems?
    Answer: Yes, the MT29F2G08ABBEAHC-IT:E can be used with various operating systems as long as they support NAND flash memory.

  6. Question: What is the power supply voltage required for the MT29F2G08ABBEAHC-IT:E?
    Answer: The MT29F2G08ABBEAHC-IT:E operates at a voltage range of 2.7V to 3.6V.

  7. Question: Does the MT29F2G08ABBEAHC-IT:E support wear-leveling algorithms?
    Answer: Yes, the MT29F2G08ABBEAHC-IT:E supports wear-leveling algorithms to ensure even distribution of data writes and prolong the lifespan of the memory.

  8. Question: Can the MT29F2G08ABBEAHC-IT:E be used in automotive applications?
    Answer: Yes, the MT29F2G08ABBEAHC-IT:E is suitable for automotive applications due to its high temperature tolerance and reliability.

  9. Question: What is the maximum data transfer rate of the MT29F2G08ABBEAHC-IT:E?
    Answer: The MT29F2G08ABBEAHC-IT:E has a maximum data transfer rate of up to 52 megabytes per second (MB/s).

  10. Question: Is the MT29F2G08ABBEAHC-IT:E available in different package options?
    Answer: Yes, the MT29F2G08ABBEAHC-IT:E is available in various package options to accommodate different system requirements.