MT29F1G08ABADAH4-IT:D

Product Overview

Category

MT29F1G08ABADAH4-IT:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABADAH4-IT:D offers a storage capacity of 1 gigabit.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G08ABADAH4-IT:D is typically packaged in a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 1 gigabit
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: SMT
• Data Transfer Rate: Up to 400 megabits per second

Detailed Pin Configuration

The MT29F1G08ABADAH4-IT:D has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CLE: Command latch enable
5. ALE: Address latch enable
6. CE#: Chip enable
7. RE#: Read enable
8. WE#: Write enable
9. R/B#: Ready/busy status
10. DQ0-DQ7: Data input/output

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of entire blocks of data.
• Random Access: Provides the ability to access data at any memory location.
• Wear-Leveling: Implements wear-leveling algorithms to evenly distribute write operations across memory cells, extending the product's lifespan.
• Error Correction: Utilizes advanced error correction techniques to ensure data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate for quick read and write operations.
• Low power consumption, making it suitable for battery-powered devices.
• Compact package for easy integration into various electronic devices.
• Reliable performance with advanced error correction techniques.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it becomes unreliable.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F1G08ABADAH4-IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data using a combination of voltage levels.

To write data, the memory cells are programmed by applying specific voltages to the appropriate address lines and data lines. Reading data involves sensing the voltage levels stored in the memory cells and converting them back into digital information.

Detailed Application Field Plans

The MT29F1G08ABADAH4-IT:D is widely used in various applications, including: - Smartphones and tablets for data storage and app execution. - Digital cameras for storing photos and videos. - Solid-state drives (SSDs) for high-speed data storage in computers and servers. - Automotive electronics for storing firmware, maps, and other data.

Detailed and Complete Alternative Models

Some alternative models to the MT29F1G08ABADAH4-IT:D include: - Samsung K9K8G08U0D - Micron MT29F1G08ABAEAWP - Toshiba TH58NVG6D2FTA20

These alternative models offer similar specifications and functionality, providing options for different design requirements.

In conclusion, the MT29F1G08ABADAH4-IT:D is a NAND flash memory product with a high storage capacity, fast data transfer rate, and reliable performance. It finds applications in various electronic devices and offers advantages such as low power consumption and compact packaging. However, it has limitations in terms of endurance and cost compared to other non-volatile memory options.