MT28F400B3SG-8 B

Product Overview

Category

The MT28F400B3SG-8 B belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as computers, smartphones, and digital cameras.

Characteristics

• Non-volatile: The MT28F400B3SG-8 B retains stored data even when power is turned off.
• High capacity: It offers a storage capacity of 4 gigabits (512 megabytes).
• Fast access time: The device provides quick access to stored data, reducing latency.
• Reliable: It has a high endurance and can withstand numerous read and write cycles.
• Low power consumption: The MT28F400B3SG-8 B operates efficiently, minimizing energy usage.

Package

The MT28F400B3SG-8 B is available in a compact and standardized package, making it compatible with various electronic systems.

Essence

The essence of the MT28F400B3SG-8 B lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

This flash memory device is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary.

Specifications

• Manufacturer: Unknown
• Model: MT28F400B3SG-8 B
• Memory Type: Flash memory
• Capacity: 4 gigabits (512 megabytes)
• Access Time: 8 nanoseconds
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The MT28F400B3SG-8 B features a parallel interface with the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RP#: Ready/Busy status
8. RY/BY#: Read/Busy status
9. BYTE#: Byte/Word organization selection
10. RESET#: Reset input

Functional Features

• High-speed data transfer: The MT28F400B3SG-8 B allows for fast read and write operations, enabling efficient data handling.
• Error correction: It incorporates error correction techniques to ensure data integrity and reliability.
• Block erase capability: The device supports block erase operations, allowing for efficient memory management.
• Write protection: Certain sectors of the memory can be write-protected to prevent accidental data modification.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access time
• Low power consumption
• Reliable and durable
• Supports block erase operations

Disadvantages

• Parallel interface may limit compatibility with newer systems using serial interfaces
• Limited availability of detailed technical documentation

Working Principles

The MT28F400B3SG-8 B utilizes a floating-gate transistor technology to store digital information. When data is written, electrical charges are trapped in the floating gate, altering the transistor's behavior. These charges can be later detected to retrieve the stored data.

Detailed Application Field Plans

The MT28F400B3SG-8 B finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Smartphones and tablets - Digital cameras - Gaming consoles - Embedded systems

Detailed and Complete Alternative Models

• MT28F400B3WG-8 B: Similar flash memory device with wider temperature range.
• MT28F400B3RG-8 B: Flash memory device with extended data retention capabilities.
• MT28F400B3PG-8 B: Flash memory device with lower power consumption.

These alternative models offer similar functionality and can be considered as substitutes for the MT28F400B3SG-8 B in various applications.

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