M29W400FB5AN6E

Product Overview

Category

M29W400FB5AN6E belongs to the category of Flash Memory.

Use

It is commonly used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: The M29W400FB5AN6E offers a storage capacity of 4 gigabits (512 megabytes).
• Fast read and write speeds: Allows for quick access and transfer of data.
• Reliable performance: Designed to withstand frequent read/write cycles without data corruption.
• Low power consumption: Optimized for energy efficiency, making it suitable for battery-powered devices.

Package

The M29W400FB5AN6E is available in a compact surface-mount package, ensuring easy integration into circuit boards.

Essence

The essence of M29W400FB5AN6E lies in its ability to provide reliable and high-capacity storage for electronic devices, enabling efficient data management and retrieval.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of M29W400FB5AN6E flash memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NOR Flash
• Capacity: 4 gigabits (512 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP48

Detailed Pin Configuration

The M29W400FB5AN6E features a TSOP48 package with the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. BYTE#
35. WE#
36. CE#
37. OE#
38. RY/BY#
39. RESET#
40. DQ0
41. DQ1
42. DQ2
43. DQ3
44. DQ4
45. DQ5
46. DQ6
47. DQ7
48. GND

Functional Features

• Erase and Program Operations: The M29W400FB5AN6E supports sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: Certain sectors can be locked to prevent accidental erasure or modification of critical data.
• Read Protection: Provides security by allowing the device to be protected against unauthorized access.
• Software Reset: Allows for a software-initiated reset of the device.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample space for data storage needs.
• Fast read and write speeds facilitate quick data access and transfer.
• Reliable performance ensures data integrity even with frequent usage.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The M29W400FB5AN6E utilizes NOR flash memory technology. It stores data by trapping electrons in floating gate transistors, which can be electrically erased and reprogrammed. When reading data, the stored charge is detected, allowing retrieval of the stored information.

Detailed Application Field Plans

The M29W400FB5AN6E finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. M29W400FT5AN6E
2. M29W400FB5AN6F
3. M29W400FT5AN6F
4. M29W400FB5AN6G
5. M29W400FT5AN6G

These alternative models offer similar specifications and functionality to the M29W400