Micron Technology Inc.
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M29W400DT55N6E
צפה בפרטים DataSheets

M29W400DT55N6E

Product Overview

Category

M29W400DT55N6E belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

  • Non-volatile memory: The stored data is retained even when power is turned off.
  • High storage capacity: M29W400DT55N6E has a storage capacity of 4 gigabits (512 megabytes).
  • Fast data access: It offers high-speed read and write operations, allowing for quick retrieval and storage of data.
  • Reliable performance: This flash memory chip is designed to provide reliable and consistent performance over its lifespan.

Package

M29W400DT55N6E is available in a compact surface-mount package. The specific package type may vary depending on the manufacturer.

Essence

The essence of M29W400DT55N6E lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

Typically, M29W400DT55N6E is packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary based on the manufacturer's specifications.

Specifications

  • Memory Type: Flash
  • Capacity: 4 gigabits (512 megabytes)
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: Surface Mount

Detailed Pin Configuration

The pin configuration of M29W400DT55N6E is as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. A0-A18: Address inputs
  4. DQ0-DQ15: Data inputs/outputs
  5. WE#: Write enable
  6. CE#: Chip enable
  7. OE#: Output enable
  8. RP#: Ready/Busy status
  9. RESET#: Reset signal

Functional Features

  • High-speed data transfer: M29W400DT55N6E supports fast read and write operations, enabling quick data access.
  • Erase and program capability: It allows for erasing and reprogramming of specific memory blocks, providing flexibility in data storage.
  • Low power consumption: This flash memory chip is designed to minimize power consumption, making it suitable for battery-powered devices.
  • Error correction: It incorporates error correction techniques to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data access
  • Reliable performance
  • Low power consumption

Disadvantages

  • Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
  • Higher cost per unit compared to other types of memory.

Working Principles

M29W400DT55N6E utilizes the principles of floating-gate transistors to store digital information. It employs a combination of electrical charges to represent binary data (0s and 1s). The stored charges can be manipulated through programming and erasing operations, allowing for data storage and retrieval.

Detailed Application Field Plans

M29W400DT55N6E finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Smartphones - Tablets - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to M29W400DT55N6E include: - M29W400DB55N6E - M29W400DT70N6E - M29W400DB70N6E - M29W400DT90N6E

These alternative models may have variations in specifications, package types, or other features, but they serve the same purpose of flash memory data storage.

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של M29W400DT55N6E בפתרונות טכניים

Sure! Here are 10 common questions and answers related to the application of M29W400DT55N6E in technical solutions:

  1. Q: What is the M29W400DT55N6E? A: The M29W400DT55N6E is a flash memory device commonly used in various technical solutions.

  2. Q: What is the storage capacity of the M29W400DT55N6E? A: The M29W400DT55N6E has a storage capacity of 4 megabits (or 512 kilobytes).

  3. Q: What is the operating voltage range for this device? A: The M29W400DT55N6E operates within a voltage range of 2.7V to 3.6V.

  4. Q: What interface does the M29W400DT55N6E use? A: The M29W400DT55N6E uses a parallel interface for data transfer.

  5. Q: Can the M29W400DT55N6E be used in automotive applications? A: Yes, the M29W400DT55N6E is suitable for automotive applications due to its wide operating temperature range and reliability.

  6. Q: Is the M29W400DT55N6E compatible with other flash memory devices? A: The M29W400DT55N6E follows industry-standard pinouts and protocols, making it compatible with similar flash memory devices.

  7. Q: What is the typical access time for reading data from the M29W400DT55N6E? A: The typical access time for reading data from this device is around 55 nanoseconds.

  8. Q: Can the M29W400DT55N6E be reprogrammed? A: Yes, the M29W400DT55N6E supports in-system programming and can be reprogrammed multiple times.

  9. Q: What is the data retention period of the M29W400DT55N6E? A: The M29W400DT55N6E has a typical data retention period of 20 years.

  10. Q: Are there any specific precautions to consider when using the M29W400DT55N6E? A: It is important to handle the device properly to avoid electrostatic discharge (ESD) damage. Additionally, following the manufacturer's guidelines for voltage levels and timing is crucial for reliable operation.

Please note that these answers are general and may vary depending on the specific application and requirements.