23K640-E/ST

Product Overview

Category

The 23K640-E/ST belongs to the category of Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) chips.

Use

This chip is primarily used for non-volatile data storage in various electronic devices, such as microcontrollers, sensors, and communication modules.

Characteristics

• Non-volatile memory: Retains data even when power is disconnected.
• High storage capacity: The 23K640-E/ST offers a storage capacity of 64 kilobits (8 kilobytes).
• Serial interface: Communicates with the host device using a simple serial protocol.
• Low power consumption: Designed to operate with minimal power requirements.
• Wide operating voltage range: Can be powered from 2.5V to 5.5V.
• Extended temperature range: Suitable for use in industrial environments (-40°C to +85°C).

Package

The 23K640-E/ST is available in an industry-standard 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of the 23K640-E/ST is its ability to provide reliable and non-volatile data storage in a compact form factor.

Packaging/Quantity

This chip is typically sold in reels or tubes, with each reel/tube containing a specific quantity of units. Please refer to the manufacturer's specifications for detailed packaging information.

Specifications

• Storage Capacity: 64 kilobits (8 kilobytes)
• Interface: Serial (SPI - Serial Peripheral Interface)
• Operating Voltage: 2.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Minimum 200 years
• Endurance: Minimum 1 million write cycles

Detailed Pin Configuration

The 23K640-E/ST features the following pin configuration:

1. Chip Select (CS)
2. Serial Clock (SCK)
3. Serial Data Input/Output (SDI/SDO)
4. Write Protect (WP)
5. Hold (HOLD)
6. Ground (GND)
7. No Connection (NC)
8. Power Supply (VCC)

Functional Features

• Byte-level Read and Write Operations: Allows individual bytes to be read from or written to the memory.
• Sequential Read Mode: Enables continuous reading of multiple bytes without the need for repeated address selection.
• Software Protection: Provides write protection for specific memory areas, preventing accidental modification.
• Hardware Protection: Supports hardware write protection using the WP pin.
• Low Power Consumption: Optimized for low power operation, making it suitable for battery-powered devices.
• Fast Write Cycle Time: Offers fast write cycle times, reducing overall data transfer time.

Advantages and Disadvantages

Advantages

• Compact form factor
• High storage capacity
• Wide operating voltage range
• Extended temperature range
• Reliable and non-volatile data storage
• Low power consumption

Disadvantages

• Limited storage capacity compared to other EEPROM options
• Requires a serial interface for communication

Working Principles

The 23K640-E/ST utilizes an electrically erasable floating-gate transistor technology to store and retrieve data. It employs a serial interface, allowing the host device to communicate with the chip using a simple serial protocol. The data is stored in non-volatile memory cells, ensuring that the information remains intact even when power is disconnected.

Detailed Application Field Plans

The 23K640-E/ST can be used in various applications, including but not limited to: - Microcontrollers - Sensors - Communication modules - Industrial control systems - Automotive electronics - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

• 23K640-I/SN
• 23K640-I/ST
• 23K640-E/SN
• 23K640-E/P
• 23K640-E/MC

These alternative models offer similar functionality and characteristics to the 23K640-E/ST, providing options for different package types or additional features.

In conclusion, the 23K640-E/ST is a versatile Serial EEPROM chip that offers reliable and non-volatile data storage in various electronic devices. With its high storage capacity, low power consumption, and wide operating voltage range, it is well-suited for a wide range of applications.