DS1248YP-70+: Product Overview

Basic Information

Category: Integrated Circuit (IC)

Use: Non-volatile SRAM (NVSRAM) for data storage and retrieval

Characteristics: - High-speed access times - Low power consumption - Durable and reliable - Easy to integrate into existing systems

Package: 32-pin DIP (Dual Inline Package)

Essence: The DS1248YP-70+ is a non-volatile static random-access memory (NVSRAM) that combines the benefits of both RAM and non-volatile storage. It retains data even when power is lost, making it ideal for applications requiring persistent memory.

Packaging/Quantity: The DS1248YP-70+ is available in a standard tube packaging with 25 units per tube.

Specifications

• Access Time: 70 ns
• Memory Size: 1 Megabit (128K x 8)
• Operating Voltage: 4.5V to 5.5V
• Standby Current: 100μA (typical)
• Data Retention: 10 years minimum
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The DS1248YP-70+ has a total of 32 pins, each serving a specific function. Here is the detailed pin configuration:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A16)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. Power Supply (VCC)

Functional Features

• Non-volatile Storage: The DS1248YP-70+ retains data even when power is lost, ensuring data integrity and reliability.
• High-Speed Access: With an access time of 70 ns, the NVSRAM provides fast read and write operations.
• Low Power Consumption: The device operates with low power consumption, making it suitable for battery-powered applications.
• Easy Integration: The DS1248YP-70+ can be easily integrated into existing systems due to its standard pin configuration and compatibility.

Advantages and Disadvantages

Advantages: - Combines RAM and non-volatile storage - Fast access times - Low power consumption - Durable and reliable

Disadvantages: - Relatively small memory size compared to other storage options - Higher cost compared to traditional SRAM

Working Principles

The DS1248YP-70+ utilizes a combination of volatile static random-access memory (SRAM) and non-volatile electrically erasable programmable read-only memory (EEPROM). When power is applied, the device operates as a regular SRAM, allowing data to be read from or written to the memory. However, when power is lost, an internal circuit automatically transfers the data from the SRAM to the EEPROM, ensuring data retention.

Detailed Application Field Plans

The DS1248YP-70+ finds applications in various fields, including but not limited to: 1. Industrial Control Systems 2. Automotive Electronics 3. Medical Devices 4. Communication Equipment 5. Aerospace and Defense Systems

In these applications, the NVSRAM is used to store critical data that needs to be retained even during power outages or system failures.

Detailed and Complete Alternative Models

1. DS1248Y-70+: Similar to DS1248YP-70+, but without the "+" designation.
2. DS1248AB-70+: Advanced version with additional features and higher performance.
3. DS1248Z-70+: Low-power variant with reduced standby current.

These alternative models offer different specifications and features to cater to specific application requirements.

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