PFD-21N30WQ Product Encyclopedia Entry

Introduction

The PFD-21N30WQ is a versatile electronic component that belongs to the category of power field-effect transistors (FETs). This entry provides an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models of the PFD-21N30WQ.

Basic Information Overview

• Category: Power Field-Effect Transistor (FET)
• Use: The PFD-21N30WQ is commonly used in power management applications, such as voltage regulation and switching circuits.
• Characteristics: It exhibits high power-handling capabilities, low on-state resistance, and efficient switching performance.
• Package: The PFD-21N30WQ is typically available in a TO-220 package, which provides thermal efficiency and ease of mounting.
• Essence: It serves as a crucial component in power electronics, enabling efficient control and regulation of electrical power.
• Packaging/Quantity: The PFD-21N30WQ is usually supplied in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

The PFD-21N30WQ features the following specifications: - Drain-Source Voltage (VDS): 300V - Continuous Drain Current (ID): 21A - On-State Resistance (RDS(on)): 0.03Ω - Gate-Source Voltage (VGS): ±20V - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The PFD-21N30WQ has a standard pin configuration with three terminals: gate (G), drain (D), and source (S).

Functional Features

• High Power Handling: Capable of managing significant power levels in various applications.
• Low On-State Resistance: Enables efficient conduction and minimal power loss during operation.
• Fast Switching Performance: Facilitates rapid transitions between on and off states, contributing to overall system efficiency.

Advantages and Disadvantages

Advantages

• Efficient Power Management: Enables effective control and regulation of power in diverse electronic systems.
• Thermal Performance: The TO-220 package design enhances thermal dissipation, ensuring reliable operation under varying load conditions.

Disadvantages

• Gate Drive Complexity: Requires careful attention to gate drive circuitry to optimize performance and reliability.
• Sensitivity to Overvoltage: Susceptible to damage if subjected to excessive voltage levels beyond specified ratings.

Working Principles

The PFD-21N30WQ operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals. When appropriate gate-source voltage is applied, the FET allows for efficient power conduction, contributing to its role in power management applications.

Detailed Application Field Plans

The PFD-21N30WQ finds extensive use in the following application fields: - Switching Power Supplies - Motor Control Systems - Voltage Regulation Circuits - Inverter and Converter Modules - Electronic Load Switching

Detailed and Complete Alternative Models

• PFD-21N30WQX: A variant with extended temperature range and enhanced ruggedness for harsh operating environments.
• PFD-21N30WR: Offers improved reverse recovery characteristics, suitable for specific power conversion applications.

In conclusion, the PFD-21N30WQ stands as a pivotal component in power electronics, offering efficient power management capabilities across diverse applications.

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