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IXYT30N65C3H1HV

IXYT30N65C3H1HV

Product Overview

Category

The IXYT30N65C3H1HV belongs to the category of power MOSFETs.

Use

It is commonly used in high-voltage applications such as power supplies, motor control, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Package

The IXYT30N65C3H1HV is typically available in a TO-247 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged individually and comes in quantities suitable for production or prototyping needs.

Specifications

  • Voltage Rating: 650V
  • Current Rating: 30A
  • On-Resistance: 0.065Ω
  • Gate Threshold Voltage: 4V
  • Total Gate Charge: 60nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXYT30N65C3H1HV typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • Enhanced thermal performance
  • High-speed switching
  • Robust avalanche energy handling capability

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance leads to reduced power dissipation
  • Fast switching speed allows for efficient power control

Disadvantages

  • Higher gate threshold voltage compared to some alternative models
  • May require careful consideration of driving circuitry due to high gate charge

Working Principles

The IXYT30N65C3H1HV operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is well-suited for use in: - Switch-mode power supplies - Motor drives - Inverters for renewable energy systems - Industrial power control systems

Detailed and Complete Alternative Models

Some alternative models to the IXYT30N65C3H1HV include: - IXFN30N65X3 - IRFP4668PBF - STW45NM50FD

In conclusion, the IXYT30N65C3H1HV power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power management applications.

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של IXYT30N65C3H1HV בפתרונות טכניים

  1. What is the maximum voltage rating of IXYT30N65C3H1HV?

    • The maximum voltage rating of IXYT30N65C3H1HV is 650V.
  2. What is the typical current rating for IXYT30N65C3H1HV?

    • The typical current rating for IXYT30N65C3H1HV is 30A.
  3. What are the typical applications for IXYT30N65C3H1HV?

    • IXYT30N65C3H1HV is commonly used in applications such as motor drives, power supplies, and inverters.
  4. What is the on-state voltage drop of IXYT30N65C3H1HV?

    • The on-state voltage drop of IXYT30N65C3H1HV is typically around 1.8V.
  5. What is the thermal resistance of IXYT30N65C3H1HV?

    • The thermal resistance of IXYT30N65C3H1HV is typically around 0.45°C/W.
  6. Is IXYT30N65C3H1HV suitable for high-voltage applications?

    • Yes, IXYT30N65C3H1HV is designed for high-voltage applications with its 650V rating.
  7. What is the switching frequency range for IXYT30N65C3H1HV?

    • The switching frequency range for IXYT30N65C3H1HV is typically between 10kHz and 100kHz.
  8. Does IXYT30N65C3H1HV require a heatsink for operation?

    • Yes, IXYT30N65C3H1HV may require a heatsink depending on the specific application and operating conditions.
  9. What are the recommended gate drive voltage levels for IXYT30N65C3H1HV?

    • The recommended gate drive voltage levels for IXYT30N65C3H1HV typically range from 15V to 20V.
  10. Can IXYT30N65C3H1HV be used in parallel configurations for higher current handling?

    • Yes, IXYT30N65C3H1HV can be used in parallel configurations to increase the overall current handling capability. However, proper attention should be given to matching and balancing the devices in parallel.