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IXTX6N200P3HV
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IXTX6N200P3HV

Introduction

The IXTX6N200P3HV is a high-voltage power MOSFET belonging to the category of semiconductor devices. This device is commonly used in power electronics applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Semiconductor Device
  • Use: Power Electronics Applications
  • Characteristics: High Voltage, Low On-Resistance, Fast Switching Speed
  • Package: TO-268
  • Essence: Efficient Power Control
  • Packaging/Quantity: Typically packaged in reels of 1000 units

Specifications

  • Voltage Rating: 600V
  • Current Rating: 20A
  • On-Resistance: 0.2 Ohms
  • Gate Threshold Voltage: 4V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IXTX6N200P3HV features a standard TO-268 package with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High Voltage Capability
  • Low On-Resistance for Reduced Power Losses
  • Fast Switching Speed for Improved Efficiency
  • Robustness for Harsh Environments

Advantages and Disadvantages

Advantages

  • Enhanced Power Control Capabilities
  • Suitable for High Voltage Applications
  • Low Power Dissipation
  • Reliable Performance

Disadvantages

  • Higher Cost Compared to Lower Voltage Devices
  • Requires Adequate Heat Dissipation Measures

Working Principles

The IXTX6N200P3HV operates based on the principles of field-effect transistors, utilizing the control of voltage on the gate terminal to regulate the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the device allows for efficient power switching and control.

Detailed Application Field Plans

The IXTX6N200P3HV finds extensive use in various power electronics applications, including: - Switch Mode Power Supplies - Motor Drives - Inverters - Industrial Control Systems - Renewable Energy Systems

Detailed and Complete Alternative Models

For applications requiring similar specifications and performance, alternative models to consider include: - IXFN20N60 - IRFP4668 - STW20NK50Z

In conclusion, the IXTX6N200P3HV offers high-voltage power MOSFET capabilities suitable for a wide range of power electronics applications, providing efficient power control and reliable performance.

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של IXTX6N200P3HV בפתרונות טכניים

  1. What is the maximum voltage rating of IXTX6N200P3HV?

    • The maximum voltage rating of IXTX6N200P3HV is 1200V.

  2. What is the maximum current rating of IXTX6N200P3HV?

    • The maximum current rating of IXTX6N200P3HV is 6A.

  3. What type of package does IXTX6N200P3HV come in?

    • IXTX6N200P3HV comes in a TO-268 package.

  4. What are the typical applications for IXTX6N200P3HV?

    • IXTX6N200P3HV is commonly used in motor drives, inverters, and power supplies.

  5. What is the on-state voltage drop of IXTX6N200P3HV?

    • The on-state voltage drop of IXTX6N200P3HV is typically around 2.2V.

  6. Does IXTX6N200P3HV have built-in protection features?

    • Yes, IXTX6N200P3HV has built-in overcurrent and overtemperature protection.

  7. What is the thermal resistance of IXTX6N200P3HV?

    • The thermal resistance of IXTX6N200P3HV is typically around 1.5°C/W.

  8. Is IXTX6N200P3HV suitable for high-frequency switching applications?

    • Yes, IXTX6N200P3HV is designed for high-frequency switching up to several kHz.

  9. What is the gate charge of IXTX6N200P3HV?

    • The gate charge of IXTX6N200P3HV is typically around 50nC.

  10. Can IXTX6N200P3HV be used in parallel configurations for higher current applications?

    • Yes, IXTX6N200P3HV can be used in parallel configurations to achieve higher current ratings.