IXKH47N60C
Product Overview
- Category: Power MOSFET
- Use: Power switching applications
- Characteristics: High voltage, high current capability, low on-state resistance
- Package: TO-247
- Essence: Efficient power management
- Packaging/Quantity: Single unit packaging
Specifications
- Voltage Rating: 600V
- Current Rating: 47A
- On-State Resistance: 0.15 ohms
- Gate Threshold Voltage: 2.5V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IXKH47N60C features a standard TO-247 pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- High voltage capability for power applications
- Low on-state resistance for efficient power management
- Fast switching speed for improved performance
- Robust construction for reliability in demanding environments
Advantages and Disadvantages
Advantages
- High voltage and current handling capacity
- Low on-state resistance leading to reduced power losses
- Fast switching speed for improved efficiency
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- Larger physical size due to higher power handling capability
Working Principles
The IXKH47N60C operates based on the principle of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device. When a suitable voltage is applied to the gate terminal, it allows the flow of current between the drain and source terminals, enabling efficient power switching.
Detailed Application Field Plans
The IXKH47N60C is ideally suited for various power electronics applications, including: - Switch-mode power supplies - Motor drives - Inverters - Industrial power systems - Renewable energy systems
Detailed and Complete Alternative Models
- IXFN48N50P: Similar voltage and current ratings with enhanced thermal performance
- IRFP4668PBF: Comparable specifications with optimized switching characteristics
- STW47N60M2: Alternative option with similar voltage and current ratings
In conclusion, the IXKH47N60C Power MOSFET offers high voltage and current capabilities, low on-state resistance, and fast switching speed, making it an ideal choice for various power switching applications.
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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של IXKH47N60C בפתרונות טכניים
What is IXKH47N60C?
- IXKH47N60C is a high voltage IGBT (Insulated Gate Bipolar Transistor) designed for various technical solutions requiring high power switching.
What is the maximum voltage and current rating of IXKH47N60C?
- The maximum voltage rating of IXKH47N60C is 600V, and the maximum continuous current rating is 47A.
What are the typical applications of IXKH47N60C?
- IXKH47N60C is commonly used in motor drives, power supplies, renewable energy systems, and industrial automation.
What are the key features of IXKH47N60C?
- Some key features include low VCE(sat), fast switching speed, high input impedance, and ruggedness against short-circuit conditions.
What is the thermal resistance of IXKH47N60C?
- The thermal resistance of IXKH47N60C is typically around 0.6°C/W.
Can IXKH47N60C be used in parallel configurations for higher current applications?
- Yes, IXKH47N60C can be paralleled to achieve higher current handling capabilities in applications that require it.
What are the recommended gate driver specifications for IXKH47N60C?
- It is recommended to use a gate driver with sufficient drive voltage and current capability to ensure proper turn-on and turn-off of the IGBT.
Does IXKH47N60C require any special protection circuitry?
- It is advisable to incorporate overcurrent protection, overvoltage protection, and snubber circuits to protect IXKH47N60C from potential damage during operation.
What are the typical operating temperature ranges for IXKH47N60C?
- IXKH47N60C is designed to operate within a temperature range of -40°C to 150°C.
Where can I find detailed datasheets and application notes for IXKH47N60C?
- Detailed datasheets and application notes for IXKH47N60C can be found on the manufacturer's website or through authorized distributors.