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IXFN210N30P3
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IXFN210N30P3

Product Overview

Category

The IXFN210N30P3 belongs to the category of power MOSFETs.

Use

It is commonly used in power electronics applications such as motor control, power supplies, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Package

The IXFN210N30P3 is typically available in a TO-268 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually supplied in reels or tubes with varying quantities depending on the manufacturer.

Specifications

  • Drain-Source Voltage (VDS): 300V
  • Continuous Drain Current (ID): 210A
  • On-Resistance (RDS(on)): 0.032 ohms
  • Gate Threshold Voltage (VGS(th)): 2.5V
  • Total Gate Charge (Qg): 160nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IXFN210N30P3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • High efficiency
  • Enhanced thermal performance
  • Robustness against overcurrent and overvoltage conditions

Advantages

  • High voltage capability allows for versatile applications
  • Low on-resistance minimizes power dissipation
  • Fast switching speed enables efficient power control

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Requires careful handling due to its high power capabilities

Working Principles

The IXFN210N30P3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The IXFN210N30P3 is well-suited for use in: - Electric vehicle powertrains - Industrial motor drives - Renewable energy systems - Uninterruptible power supplies (UPS) - High-power DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IXFN210N30P3 include: - IRFP4668PbF - STW75N60M2 - FDPF33N25T

In conclusion, the IXFN210N30P3 power MOSFET offers high-performance characteristics suitable for demanding power electronics applications, making it an essential component in modern electronic systems.

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של IXFN210N30P3 בפתרונות טכניים

  1. What is the maximum drain-source voltage of IXFN210N30P3?

    • The maximum drain-source voltage of IXFN210N30P3 is 300V.

  2. What is the continuous drain current rating of IXFN210N30P3?

    • The continuous drain current rating of IXFN210N30P3 is 210A.

  3. What is the on-state resistance (RDS(on)) of IXFN210N30P3?

    • The on-state resistance (RDS(on)) of IXFN210N30P3 is typically 0.042 ohms.

  4. What is the gate threshold voltage of IXFN210N30P3?

    • The gate threshold voltage of IXFN210N30P3 is typically 2.5V.

  5. What are the typical applications of IXFN210N30P3?

    • IXFN210N30P3 is commonly used in applications such as motor drives, inverters, and power supplies.

  6. What is the operating temperature range of IXFN210N30P3?

    • The operating temperature range of IXFN210N30P3 is -55°C to 150°C.

  7. Does IXFN210N30P3 require a heat sink for operation?

    • Yes, IXFN210N30P3 typically requires a heat sink for efficient operation, especially at high currents.

  8. Is IXFN210N30P3 suitable for high-frequency switching applications?

    • Yes, IXFN210N30P3 is designed for high-frequency switching applications.

  9. What is the input capacitance of IXFN210N30P3?

    • The input capacitance of IXFN210N30P3 is typically 6800pF.

  10. Can IXFN210N30P3 be used in parallel to increase current handling capability?

    • Yes, IXFN210N30P3 can be used in parallel to increase current handling capability, but proper precautions must be taken to ensure balanced current sharing.

Please let me know if you need further assistance with IXFN210N30P3 or any other technical solutions.