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IXFH18N100Q3
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IXFH18N100Q3

Product Overview

  • Category: Power MOSFET
  • Use: High power switching applications
  • Characteristics: High voltage, high current capability, low on-resistance
  • Package: TO-247
  • Essence: Power management
  • Packaging/Quantity: Tube/25 units

Specifications

  • Voltage Rating: 1000V
  • Current Rating: 18A
  • On-Resistance: 0.29 Ohms
  • Gate Charge: 60nC
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Functional Features

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Advantages and Disadvantages

Advantages

  • Suitable for high power applications
  • Low conduction losses
  • Enhanced thermal performance

Disadvantages

  • Higher cost compared to lower voltage MOSFETs
  • Gate drive requirements are more critical

Working Principles

The IXFH18N100Q3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is ideal for use in high power applications such as industrial motor drives, power supplies, and renewable energy systems. Its high voltage and current ratings make it suitable for demanding environments.

Detailed and Complete Alternative Models

  • IXFH24N100Q3
  • IXFH30N100Q3
  • IXFH36N100Q3

In conclusion, the IXFH18N100Q3 is a high-voltage power MOSFET designed for high-power switching applications. With its low on-resistance and high current capability, it offers enhanced performance in various industrial and power management applications.

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רשום 10 שאלות ותשובות נפוצות הקשורות ליישום של IXFH18N100Q3 בפתרונות טכניים

  1. What is IXFH18N100Q3?

    • IXFH18N100Q3 is a high power MOSFET designed for various technical applications requiring efficient power management.

  2. What are the key specifications of IXFH18N100Q3?

    • The key specifications include a voltage rating of 1000V, a continuous drain current of 18A, and a low on-resistance for efficient power handling.

  3. In what technical solutions can IXFH18N100Q3 be used?

    • IXFH18N100Q3 can be used in applications such as motor control, power supplies, inverters, and welding equipment.

  4. How does IXFH18N100Q3 contribute to efficient power management?

    • IXFH18N100Q3 offers low on-resistance and high voltage ratings, enabling it to handle high power levels with minimal losses.

  5. What are the thermal characteristics of IXFH18N100Q3?

    • The MOSFET is designed with low thermal resistance to ensure effective heat dissipation in demanding technical solutions.

  6. Can IXFH18N100Q3 be used in automotive applications?

    • Yes, IXFH18N100Q3 is suitable for automotive applications such as electric vehicle powertrains and battery management systems.

  7. Does IXFH18N100Q3 require any special gate driving considerations?

    • It is recommended to use proper gate driving techniques to maximize the performance and reliability of IXFH18N100Q3 in technical solutions.

  8. What protection features does IXFH18N100Q3 offer?

    • IXFH18N100Q3 provides built-in protection against overcurrent, overvoltage, and thermal issues, enhancing the safety of the overall system.

  9. Are there any application notes or reference designs available for IXFH18N100Q3?

    • Yes, detailed application notes and reference designs are available to assist engineers in implementing IXFH18N100Q3 in their technical solutions.

  10. Where can I find reliable technical support for IXFH18N100Q3?

    • Technical support for IXFH18N100Q3 can be obtained from the manufacturer's website, authorized distributors, and online forums dedicated to power electronics.